Thermal treatment method and apparatus

A thermal treatment method comprising the steps of:

• mounting a substrate on a substrate support mount disposed in a processing chamber;
• raising a temperature of the substrate;
• thermally treating the substrate by supplying a gas from a gas supply unit to the substrate;
• and
• lowering the temperature of the substrate after completion of thermally treating the substrate;
• wherein the gas supplied from the gas supply unit is supplied at a temperature lower than that of the substrate onto a central part of the substrate at a flow rate higher than that at which the same gas is supplied onto a peripheral part of the substrate when lowering the temperature of the substrate, to equalize an amount of heat radiated from the central part and that of heat radiated from the peripheral part.

A thermal treatment method comprising the steps of:

• mounting a substrate on a substrate support mount disposed in a processing chamber;
• raising a temperature of the substrate;
• thermally treating the substrate by supplying a gas from a gas supply unit to the substrate;
• and
• lowering the temperature of the substrate after completion of thermally treating the substrate;
• wherein the gas supplied from the gas supply unit is supplied at a temperature higher than that of the substrate onto a central part of the substrate at a flow rate higher than that at which the same gas is supplied onto a peripheral part of the substrate when raising the temperature of the substrate, to equalize an amount of heat absorbed by the central part and that of heat absorbed by the peripheral part.

A thermal treatment method comprising the steps of:

• mounting a substrate on a substrate support mount disposed in a processing chamber;
• raising a temperature of the substrate;
• thermally treating the substrate by supplying a gas from a gas supply unit to the substrate;
• and
• lowering the temperature of the substrate after completion of thermally treating the substrate;
• wherein the gas supplied from the gas supply unit is supplied at a temperature higher than that of the substrate onto a peripheral part of the substrate at a flow rate higher than that at which the same gas is supplied onto a central part of the substrate when lowering the temperature of the substrate, to equalize an amount of heat radiated from the central part and that of heat radiated from the peripheral part.

A thermal treatment method comprising the steps of:

• mounting a substrate on a substrate support mount disposed in a processing chamber;
• raising a temperature of the substrate;
• thermally treating the substrate by supplying a gas from a gas supply unit to the substrate;
• and
• lowering the temperature of the substrate after completion of thermally treating the substrate;
• wherein the gas is supplied onto the central part at a temperature higher than that of the same gas supplied onto the peripheral part when raising the temperature of the substrate, to equalize an amount of heat absorbed by the central part and that of heat absorbed by the peripheral part.

A thermal treatment method comprising the steps of:

• mounting a substrate on a substrate support mount disposed in a processing chamber;
• raising a temperature of the substrate;
• thermally treating the substrate by supplying a gas from a gas supply unit to the substrate;
• and
• lowering the temperature of the substrate after completion of thermally treating the substrate;
• wherein the gas is supplied onto the central part at a temperature lower than that of the same gas supplied onto the peripheral part when lowering the temperature of the substrate, to equalize an amount of heat radiated from the central part and the amount of heat radiated from the peripheral part.

A thermal treatment method comprising the steps of:

• mounting a substrate on a substrate support mount disposed in a processing chamber;
• raising a temperature of the substrate;
• thermally treating the substrate by supplying a gas from a gas supply unit to the substrate;
• and
• lowering the temperature of the substrate after completion of thermally treating the substrate;
• wherein a gas having a heat capacity greater than that of a gas supplied onto the peripheral part is supplied onto the central part when raising the temperature of the substrate, to equalize an amount of heat absorbed by the central part and that of heat absorbed by the peripheral part.

A thermal treatment method comprising the steps of:

• mounting a substrate on a substrate support mount disposed in a processing chamber;
• raising a temperature of the substrate;
• thermally treating the substrate by supplying a gas from a gas supply unit to the substrate;
• and
• lowering the temperature of the substrate after completion of thermally treating the substrate;
• wherein a gas having a heat capacity smaller than that of a gas supplied onto the peripheral part is supplied onto the central part when lowering the temperature of the substrate, to equalize an amount of heat radiated from the central part and that of heat radiated from the peripheral part.