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US 6,472,704 B2Granted
Semiconductor device having contact hole and method of manufacturing the same
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorHiroki Shinkawata
Life of this patent
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Abstract
A semiconductor device is obtained which allows a simpler formation process of a capacitor contact hole and reduction in capacitance between bit interconnections. A first capacitor contact hole is formed in a silicon nitride film and an interlayer insulating film in which a bit line contact hole is formed. The first capacitor contact hole is filled with a plug electrode having its top surface area larger than its bottom surface area. A capacitor lower electrode is formed to be connected to the top surface of the plug electrode and to cover the side and top surfaces of a bit line with a sidewall oxide film and a TEOS oxide film located therebetween.
Claims4
A semiconductor device, comprising:
- first and second source/drain regions formed spaced apart with a channel region therebetween at a main surface of a semiconductor region;
- a gate electrode formed on said channel region;
- a first etch stop layer comprised of an insulating film formed over said gate electrode;
- a first interlayer insulating film formed on said first etch stop layer;
- a bit line opening formed in a region of said first interlayer insulating film and said first etch stop layer located on said first source/drain region;
- a first capacitor opening formed in a region of said first interlayer insulating film and said first etch stop layer located on said second source/drain region;
- a bit line connected to said first source/drain region through said bit line opening;
- a plug electrode connected to said second source/drain region through said first capacitor opening and filling said first capacitor opening, and having its top surface area larger than its bottom surface area;
- and
- a conductive layer having a vertically extending capacitor contact portion electrically connected to the top surface of said plug electrode, and a capacitor lower electrode formed integrally with the top of said capacitor contact portion, said lower electrode having a pair of vertically extending parts at opposite ends of a horizontal region, wherein
- the capacitor contact portion of said conductive layer has a horizontally extending part formed to cover top and side surfaces of said bit line with a first insulating film located therebetween.
8 more elements
A semiconductor device, comprising:
- first and second source/drain regions formed spaced apart with a channel region therebetween at a main surface of a semiconductor region;
- a gate electrode formed on said channel region;
- a first etch stop layer comprised of an insulating film formed over said gate electrode;
- a first interlayer insulating film formed on said first etch stop layer;
- a bit line opening formed in a region of said first interlayer insulating film and said first etch stop layer located on said first source/drain region;
- a first capacitor opening formed in a region of said first interlayer insulating film and said first etch stop layer located on said second source/drain region;
- a bit line connected to said first source/drain region through said bit line opening;
- a plug electrode connected to said second source/drain region through said first capacitor opening and filling said first capacitor opening, and having its top surface area larger than its bottom surface area;
- a conductive layer having a capacitor contact portion electrically connected to the top surface of said plug electrode and extending vertically, and a capacitor lower electrode formed integrally with the top of said capacitor contact portion and extending horizontally, wherein the capacitor contact portion of said conductive layer has a horizontally extending part and is formed to cover top and side surfaces of said bit line with a first insulating film located therebetween;
- a second etch stop layer comprised of an insulating film formed on said first interlayer insulating film and said first insulating film;
- a second interlayer insulating film formed on said second etch stop layer;
- and
- a second capacitor opening formed in said second interlayer insulating film and said second etch stop layer to reach the first capacitor opening, wherein:
- an end of said second etch stop layer located between said second interlayer insulating film and said first insulating film is removed on a side of said second capacitor opening to form a concave portion on a top side end of said bit line,
- said capacitor contact portion is formed to fill said second capacitor opening and said concave portion and to extend over said bit line, and
- said capacitor lower electrode is formed to extend along a top surface of said second interlayer insulating film.
13 more elements
Dependencies are inferred from the claim text.