Method of forming a dual damascene opening using CVD Low-K material and spin-on-polymer

A method of forming a dual damascene opening, comprising the steps of:

• providing a semiconductor structure having at least one exposed metal line;
• forming a sealing layer over said semiconductor structure and said metal line;
• forming a spin-on-polymer layer over said sealing layer;
• forming a CVD dielectric material layer upon said spin-on-polymer layer;
• forming an anti-reflection layer over said CVD dielectric material layer;
• patterning said anti-reflection layer and said CVD dielectric material layer to form a CVD dielectric material layer via over said metal line;
• patterning said spin-on-polymer layer to form a spin-on-polymer layer via opening continuous and contiguous with said CVD dielectric material layer via and exposing a portion of said metal line;
• and
• patterning said anti-reflection layer and said CVD dielectric material layer adjacent said CVD low-k material layer via to form a CVD dielectric material layer trench;
• said spin-on-polymer layer via opening and said CVD dielectric material layer trench forming a dual damascene opening.

A method of forming a dual damascene opening, comprising the steps of:

• providing a semiconductor structure having at least one exposed metal line;
• forming a silicon nitride layer over said semiconductor structure and said metal line;
• forming a spin-on-polymer layer over said sealing layer;
• forming a CVD dielectric material layer upon said spin-on-polymer layer;
• forming an SiON layer over said CVD dielectric material layer;
• patterning said SiON layer and said CVD dielectric material layer to form a CVD dielectric material layer via over said metal line;
• patterning said spin-on-polymer layer to form a spin-on-polymer layer via opening continuous and contiguous with said CVD dielectric material layer via and exposing a portion of said metal line;
• and
• patterning said SiON layer and said CVD dielectric material layer adjacent said CVD dielectric material layer via to form a CVD dielectric material layer trench;
• said spin-on-polymer layer via opening and said CVD dielectric material layer trench forming a dual damascene opening.