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US 6,472,303 B1Granted
Method of forming a contact plug for a semiconductor device
AssigneeHynix Semiconductor Inc.
InventorsDae Hee Weon, Seok Kiu Lee
Life of this patent
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Abstract
A method of manufacturing a semiconductor device having the steps of forming an insulating layer on a silicon substrate, forming a contact hole on the insulating layer, forming a selective silicon layer in the contact hole, and forming a selective conductive plug on the selective silicon layer.
Claims16
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating layer on a silicon substrate;
- forming a contact hole on the insulating layer;
- forming a selective silicon layer in the contact hole;
- and
- forming a selective conductive plug on the selective silicon layer.
2 more elements
Dependencies are inferred from the claim text.