Method and structure for shallow trench isolation
AssigneeInfineon Technologies AG
InventorsChuan Lin, Thomas Schafbauer, Paul Wensley
Life of this patent
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Abstract
A method (see e.g., FIG. 4) of fabricating a semiconductor device includes forming a trench 12 in a semiconductor body 10. A dielectric layer 26 is formed within the trench 12. Dielectric layer 26 lines the sidewall and, possibly, the bottom portions of the trench 12 in a manner where the thickness of the dielectric 26s at the sidewall is greater than the thickness of the dielectric 26b at the bottom. A dopant 28 can then be implanted into the semiconductor body beneath the trench.
Claims33
A method of fabricating a semiconductor device, the method comprising:
- forming a trench in a semiconductor body;
- forming a dielectric layer within the trench, the dielectric layer lining at least a sidewall portion of the trench, wherein the thickness of the dielectric layer at the sidewall is greater than a thickness of dielectric at the bottom;
- after forming the dielectric layer, implanting a dopant into the trench, the dopant being implanted into the semiconductor body beneath the trench;
- and
- after implanting the dopant into the trench, filling the trench.
A method of fabricating a semiconductor device, the method comprising:
- forming a trench in a semiconductor body;
- forming a dielectric layer within the trench, the dielectric layer lining at least a sidewall portion of the trench, wherein the thickness of the dielectric layer at the sidewall is greater than a thickness of dielectric at the bottom wherein the dielectric layer lines the sidewall and bottom portions of the trench;
- implanting a dopant into the trench, the dopant being implanted into the semiconductor body beneath the trench, wherein the dopant is implanted through the dielectric layer at the bottom portion of the trench;
- and
- filling the trench.
A method of forming a semiconductor device, the method comprising:
- forming an oxide layer on the surface of a semiconductor body;
- forming a nitride layer over the oxide layer;
- etching portions of the oxide layer, the nitride layer, and the semiconductor body to form a trench in the semiconductor body;
- implanting a nitrogen bearing species through the trench and into a portion of the semiconductor body beneath the trench;
- forming a dielectric layer within the trench, the dielectric layer lining sidewall and bottom portions of the trench, wherein the thickness of the dielectric layer at the sidewall is greater than the thickness of the dielectric at the bottom;
- implanting a dopant into the trench, the dopant being implanted through the dielectric layer at the bottom portion of the trench and into the semiconductor body beneath the trench;
- and
- filling the trench with an insulating material.
A method of fabricating a semiconductor device, the method comprising:
- forming a trench in a semiconductor body;
- forming a dielectric layer within the trench, the dielectric layer lining at least a sidewall portion of the trench, wherein the thickness of the dielectric layer at the sidewall is greater than a thickness of dielectric at the bottom;
- after forming the dielectric layer, implanting a dopant into the entire trench, the dopant being implanted into the semiconductor body beneath the trench;
- and
- filling the trench.
Dependencies are inferred from the claim text.