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US 6,472,277 B1Granted
Method for fabricating a semiconductor device with an improved short channel effect
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsYeon Woo Cheong, Young Kum Back
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate having a trench in its surface, an insulating film in the trench, a doped conductive layer on the insulating film, a gate insulation film and a gate electrode on the doped conductive layer over the trench, and source and drain impurity regions in the surface of the semiconductor substrate at sides of the gate electrode.
Claims17
A method for fabricating a semiconductor device, the method comprising the steps of:
- forming a first trench in a surface of a semiconductor substrate;
- burying an insulating film in the first trench;
- selectively removing the insulating film to form a second trench in the surface of the semiconductor substrate, wherein the second trench comprises a substantially flat surface on the insulating film that is below the surface of the semiconductor substrate;
- burying a doped conductive layer in the second trench;
- forming a gate insulation film and a gate electrode on the doped conductive layer;
- and
- forming source and drain impurity regions in the surface of the semiconductor substrate at sides of the gate electrode.
4 more elements
A method for fabricating a semiconductor device, the method comprising the steps of:
- forming a first trench in a surface of a semiconductor substrate;
- forming an insulating layer in the first trench;
- selectively removing the insulating layer to form a second trench in the surface of the semiconductor substrate, wherein the second trench comprises a substantially flat surface on the insulating film that is below the surface of the semiconductor substrate;
- forming a doped polysilicon layer in the second trench;
- forming a gate insulation layer and a gate electrode on the doped polysilicon layer;
- and
- forming source and drain impurity regions in the surface of the semiconductor substrate at sides of the gate electrode.
4 more elements
Dependencies are inferred from the claim text.