Elimination of voids at the oxide/silicon interface in trench-based structures
AssigneeAdvanced Micro Devices, Inc.
InventorsFranklin D. Crawford, Jr., Ross Hartshorn, Mohammad M. Farahani
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Abstract
Various methods of manufacturing, including oxide film manufacturing, are provided. In one aspect, a method of fabricating an oxide film is provided that includes forming a trench in a semiconductor substrate and exposing the substrate to an oxidizing atmosphere containing oxygen but substantially no chlorine. The substrate is heated to react a surface of the trench with the oxidizing atmosphere to form the oxide film thereon. Chlorine induced oxide-silicon interface voids may be eliminated.
Claims13
A method of fabricating an oxide film, comprising:
- forming a trench in a semiconductor substrate;
- eliminating substantially all chlorine fiom a processing chamber;
- eliminating substantially all chlorine from an oxidizing atmosphere containing oxygen;
- exposing the substrate to the oxidizing atmosphere in the processing chamber after the elimination of substantially all chlorine from the processing chamber;
- and
- heating the substrate to react a surface of the trench with the oxidizing atmosphere to form the oxide film thereon.
A method of fabricating an isolation structure, comprising:
- forming a trench in a semiconductor substrate;
- eliminating substantially all chlorine from a processing chamber;
- eliminating substantially all chlorine from an oxidizing atmosphere containing oxygen;
- exposing the substrate to the oxidizing atmosphere in the processing chamber after the elimination of substantially all chlorine from the processing chamber;
- heating the substrate to react a surface of the trench with the oxidizing atmosphere to form an oxide film in the trench;
- and
- forming an insulating film on the oxide film that substantially fills the trench.
Dependencies are inferred from the claim text.