Programmable semiconductor device structures and methods for making the same
AssigneeVLSI Technology, Inc.
InventorSubhas Bothra
Life of this patent
Estimating the term…
Abstract
A programmable device and methods for making the programmable device are provided. The programmable device includes a link metallization line with an oxide layer defined above the link metallization line. A via hole is patterned in the oxide layer which defines a path to the link metallization line. A programming metallization line is defined over the oxide layer. The programming metallization line has an overlap portion that lies over the via hole. The overlap portion is configured to melt into the via hole to define a programming link between the link metallization line and the programming metallization line. In one example, the melting is accomplished by implementing a laser that can direct laser energy toward a desired programmable device to achieve the desired programming.
Claims12
A method for making a programmable device comprising:
- forming a link metallization line;
- depositing an oxide layer over the link metallization line;
- forming a conductive via in the oxide layer in communication with the metallization line;
- forming a programming metallization line over the oxide layer such that an overlap portion of the programming metallization line lies over the conductive via;
- removing a conductive material from the conductive via to define a via hole that forms a path between the programming metallization line and the link metallization line;
- melting at least part of the overlap portion of the programming metallization line into the via hole to define a programming link connecting the link metallization line to the programming metallization line;
- depositing an oxide layer over the programming metallization line such that the oxide layer does not fill the via hole;
- and
- depositing a nitride layer over the oxide layer.
A method for making a programmable device comprising:
- forming a link metallization line;
- depositing an oxide layer over the link metallization line;
- forming a conductive via in the oxide layer which is in communication with the link metallization line;
- patterning a programmable metallization line over the oxide layer to define an overlap portion of the programmable metallization line which at least partially overlaps the conductive via;
- removing a conductive material within the conductive via to define a via hole which creates a path between the programming metallization lines and the link metallization lines;
- forming a second oxide layer over the programmable metallization layer;
- forming a nitride layer over the second oxide layer;
- patterning the nitride layer and the second oxide layer such that a laser contact location is formed over the programmable metallization line and the via hole;
- and
- applying heat energy at the laser contact location such that the at least part of the overlap portion of the programmable metallization layer melts into the via hole and comes into contact with the link metallization layer to form a programmable link.
Dependencies are inferred from the claim text.