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US 6,472,238 B1Granted
Evaluation of etching processes in semiconductors
AssigneeTherma-Wave, Inc.
InventorYouxian Wen
Life of this patent
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AssigneeTherma-Wave, Inc.
InventorYouxian Wen
Estimating the term…
The subject invention relates to an approach for analyzing etched semiconductor samples using optical measurements. In use, one or more optical measurements are taken on an etched semiconductor wafer. At least one of the measurements includes a range of reflectivity measurements in the visible light region. The average reflectivities in the blue and red visible regions are compared to provide information as to whether the sample has been over or under etched. Once this determination is made, a more accurate analysis can be made of the exact structure of the sample. This approach overcomes the difficulties associated with attempting to analyze a sample where the data must be analyzed without knowledge of whether the sample has been over or under etched. The subject approach can also be utilized in other situations which require the treatment of an upper layer of a sample.
A method of evaluating a semiconductor wafer including a substrate and at least one layer formed there, said wafer having been subjected to an etching process, said method comprising the steps of:
A method of evaluating a semiconductor wafer including a substrate and at least one layer formed there, said wafer having been subjected to an etching process, said method comprising the steps of:
A method of evaluating a sample including a substrate and at least one layer formed thereon, said sample having been subjected to a treatment process intended to modify the upper layer, said method comprising the steps of:
Dependencies are inferred from the claim text.