Semiconductive material stencil mask, methods of manufacturing stencil masks from semiconductive material, and methods for maintaining dimensions of openings in semiconductive materials stencil masks

Abstract

In one aspect, the invention includes a method of maintaining dimensions of an opening in a semiconductive material stencil mask comprising providing two different dopants within a periphery of the opening, the dopants each being provided to a concentration of at least about 1017 atoms/cm3. In another aspect, the invention includes a method of manufacturing a stencil mask from a semiconductive material comprising: a) providing a semiconductive material wafer, the wafer comprising an upper portion and a lower portion beneath the upper portion; b) forming openings extending through the upper portion of the wafer and to the lower portion of the wafer; c) forming a first dopant concentration within the wafer, the first dopant concentration being greater within the upper portion of the wafer than within at least a part of the lower portion of the wafer; d) providing a second dopant concentration within the upper portion of the wafer; and e) removing the lower portion of the wafer to leave a stencil mask substrate having openings formed therethrough. In yet another aspect, the invention comprises a semiconductive material stencil mask comprising: a) a semiconductive material substrate having an opening therethrough, the opening being defined by a periphery comprising the semiconductive material; and b) two different dopants within the semiconductive material at the periphery, the two different dopants being of a same conductivity type.

Dependencies are inferred from the claim text.