Disposable hard mask for photomask plasma etching
AssigneePhotronics, Inc.
InventorDavid Y. Chan
Life of this patent
Estimating the term…
Abstract
A method for creating a photomask which includes a layer of hard mask material the inclusion of which improves the uniformity of critical dimensions on the photomask by minimizing the affect of macro and micro loading. The method for producing the photomask of the instant invention includes two etching processes. The first etching process etches the layer of hard mask, and the second etching process etches the anti-reflective material and opaque material.
Claims11
A method for creating an image on a blank photomask comprising a photosensitive resist material layer, a hard mask layer underlying said photosensitive resist material layer, said hard mask layer made from materials which are selectively resistant to etching in said blank photomask, an opaque layer underlying said hard mask layer, and a substantially transparent substrate layer underlying said opaque layer, said method for creating an image comprising the steps of:
- creating a patterned image in said photosensitive resist layer;
- removing portions of said photosensitive resist layer that do not correspond to said patterned image thereby exposing portions of said hard mask layer not corresponding to said patterned image;
- removing said exposed portions of said hard mask layer that do not correspond to said patterned image thereby exposing portions of said opaque layer not corresponding to said patterned image;
- and
- removing said photosensitive resist layer.
A method for creating an image on a blank photomask comprising a photosensitive resist material layer, a hard mask layer underlying said photosensitive resist material layer, said hard mask layer made from materials which are selectively resistant to etching in said blank photomask, an anti-reflective layer underlying said hard mask layer, an opaque layer underlying said anti-reflective layer, and a substantially transparent substrate layer underlying said opaque layer, said method for creating an image comprising the steps of:
- creating a patterned image in said photosensitive resist layer;
- removing portions of said photosensitive resist layer that do not correspond to said patterned image thereby exposing portions of said hard mask layer not corresponding to said patterned image;
- removing said exposed portions of said hard mask layer that d o not correspond to said patterned image thereby exposing portions of said anti-reflective layer overlying portions of said opaque layer not corresponding to said patterned image;
- and
- removing said photosensitive resist layer.
Dependencies are inferred from the claim text.