Method of manufacturing a nitride series III-V group compound semiconductor
AssigneeSony Corporation
InventorsShigeki Hashimoto, Katsunori Yanashima, Tsunenori Asatsuma, Masao Ikeda
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Abstract
When nitride series III-V group compound semiconductor is manufactured by gas phase growing using starting material for a group III element, ammonia as a starting material for a group V element and hydrogen, the gas phase molar ratio of hydrogen to the total amount of hydrogen and ammonia (H2/(H2+NH3)) is specified to 0.3<(H2/(H2+NH3))<0.7, 0.3<(H2/(H2+NH3))<0.6 or 0.4<(H2/(H2+NH3))<0.5. A nitride series III-V group compound semiconductor can thus be manufactured with less non-emission center and of excellent crystallinity.
Claims12
A method of manufacturing a nitride series III-V group compound semiconductor by a gas phase epitaxial growth by MOCVD using a metal organic gas as a starting material for a group III element, ammonia as a starting material for a group V element and hydrogen, wherein
- the gas phase molar ratio of hydrogen to the total amount of hydrogen and ammonia (hereinafter referred to as H2/(H2+NH3)) is within the range:
- 0.3<(H2/(H2+NH3))<0.7;
- and
- wherein the number of non-light emission centers produced is less when the ratio is within the range than when the ratio is outside the range.
A method of manufacturing a nitride series III-V group compound semiconductor by a gas phase epitaxial growth by MOCVD using a metal organic gas as a starting material for a group III element, ammonia as a starting material for a group V element and hydrogen, wherein
- the gas phase molar ratio of hydrogen to the total amount of hydrogen and ammonia (hereinafter referred to as H2/(H2+NH3)) is within the range:
- 0.3<(H2/(H2+NH3))<0.6;
- and
- wherein the number of non-light emission centers produced is less when the ratio is within the range than when the ratio is outside the range.
A method of manufacturing a nitride series III-V group compound semiconductor by a gas phase epitaxial growth by MOCVD using a metal organic gas as a starting material for a group III element, ammonia as a starting material for a group V element and hydrogen, wherein
- the gas phase molar ratio of hydrogen to the total amount of hydrogen and ammonia (hereinafter referred to as H2/(H2+NH3)) is within the range:
- 0.4<(H2/(H2+NH3))<0.5;
- and
- wherein the number of non-light emission centers produced is less when the ratio is within the range than when the ratio is outside the range.
Dependencies are inferred from the claim text.