Photomask method for making the same capacitor cell area near outmost cell arrays
AssigneeVanguard International Semiconductor Corporation
InventorsWen-shiang Liao, Ching-Ying Lee, Chun-Ju Huang, Chao-Ming Koh
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Abstract
A method for manufacturing a photomask of cylindrical capacitor arrays surrounded by a corrugated protection trench is provided. First, a capacitor array layout is generated, next, the capacitor array patterns are copied to protection trench area with exact the same shape and pitch, finally, the protection trench is finished by filling connecting patterns between gaps of the capacitor arrays. A corrugated close loop protection trench pattern can hence be developed upon photoresist through the exposing and is developing of a photo stepper.
Claims9
A method of manufacturing a photomask of capacitor arrays surrounding with a protection trench, comprising the steps of:
- a. generating a capacitor array pattern;
- b. generating a protection trench pattern, wherein said protection trench comprising the same pattern as said capacitor array with exactly the same shape and pitch and connecting figures between gaps of said pattern of the protection trench;
- and
- c. transferring said capacitor array and protection trench patterns to said photomask.
A method of manufacturing a photomask of cylindrical capacitor arrays surrounding with a protection trench, said photomask having a capacitor array area and a trench area, comprising the steps of:
- a. generating a cylindrical capacitor array pattern on said capacitor array area;
- b. generating a protection trench pattern on said trench area, wherein said protection trench pattern is created by first copying the same pattern as said cylindrical capacitor array with exactly the same shape and pitch, and then filling connecting figures between gaps of said protection trench pattern;
- and
- c. transferring said cylindrical capacitor array and protection trench patterns to said photomask.
A photomask of cylindrical capacitor arrays surrounding with a protection trench, said photomask having a capacitor array area and a trench area;
- wherein the improvement comprises that said protection trench comprises the same pattern as said cylindrical capacitor array with exactly the same shape and pitch which is further connected by figures between gaps of said protection trench pattern.
Dependencies are inferred from the claim text.