Lithography system including mechanism for setting optimal process parameters and method of operating the same

A method of operating a lithography system, the lithography system including a spinner which coats, bakes, cools and develops a photoresist film, a stepper which exposes the photoresist film, and first and second controllers which respectively control the spinner and the stepper, said method comprising:

• applying first wafer information denoting characteristics of a semiconductor wafer to the first controller when the semiconductor wafer is loaded on a transfer unit within the spinner;
• setting a first optimal process parameter within the spinner according to the first wafer information applied to the first controller;
• coating, baking and cooling the photoresist film within the spinner in accordance with the first process parameter;
• applying second wafer information denoting characteristics of the semiconductor wafer to the second controller when the semiconductor wafer is loaded into the stepper;
• setting a second optimal process parameter within the stepper according to the second wafer information applied to the second controller;
• exposing the photoresist film to light within the spinner in accordance with the second process parameter;
• reloading the semiconductor wafer into the spinner;
• applying third wafer information denoting characteristics of the semiconductor wafer to the first controller when the semiconductor wafer is reloaded into the spinner;
• setting a third optimal process parameter within the spinner according to the received third wafer information;
• and
• developing the photoresist film within the spinner in accordance with the third process parameter.