Semiconductor device having a trimming circuit for suppressing leakage current
AssigneeSony Corporation
InventorsTomotaka Fujisawa, Chihiro Arai
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Abstract
In a semiconductor device having a junction type diode using a bipolar transistor and a process for producing the same, a ratio of a diode electric current to a leakage electric current is improved, and latch up resistance is improved without increasing the process. A p type semiconductor substrate, a collector buried region and an n type epitaxial layer are formed, a p type first impurity region is formed in the n type epitaxial layer, an n type second impurity region is formed in the first impurity region, an N+ sinker is formed, and a collector electrode is formed, with a common electrode being formed on the first and second impurity regions.
Claims4
A semiconductor device, comprising:
- a zener diode, the zener diode having a trimming circuit which suppresses leakage current,
- said semiconductor device further comprising a diode between a terminal for applying a voltage used on trimming said trimming circuit and said zener zap diode,
- said diode comprising a first region of a first conductive type and a second region of a second conductive type which are formed on a substrate,
- said diode further comprising a third region of said second conductive type in at least a part of said first region,
- said third region being separated from said second region by said first region, and
- said third region being connected to said first region with wiring.
Dependencies are inferred from the claim text.