Semiconductor device having trench-structured rectangular unit cells
AssigneeNEC Corporation
InventorMichiaki Maruoka
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Abstract
A semiconductor device is provided which has a structure being suitable for scale-down of cells and is capable of, without an increase in channel resistance, improving a resistance property against device breakdown required when a semiconductor device breaks down due to inverse voltages applied. In the above semiconductor device, a source region narrowing section, in which width dimension on a plane of a source region is partially limited, is formed at the cell corner section disposed on diagonal lines and in a vicinity of the diagonal lines.
Claims5
A semiconductor device having a plurality of trench-structured rectangular unit cells comprising:
- a first conductive type drain region;
- a second conductive type base region formed adjacent to said first conductive type drain region;
- a trench formed in an area surrounding said second conductive type base region;
- a gate electrode formed within said trench with a gate insulating film interposed between said gate electrode and said trench;
- a first conductive type source region having a continuous shape formed along said trench on the surface of said second conductive type base region;
- and
- a region having no source is formed at a center of a rectangular surface of each of said trench-structured rectangular unit cells and extends outwardly on diagonal lines that radially extend from said center towards corners of each of said trench-structured rectangular unit cells.
A semiconductor device having a plurality of trench-structured rectangular unit cells comprising:
- a first conductive type drain region;
- a second conductive type base region formed adjacent to said first conductive type drain region;
- a trench formed in an area surrounding said second conductive type base region;
- a gate electrode formed within said trench with a gate insulating film interposed between said gate electrode and said trench;
- a first conductive type source region having a continuous shape formed along said trench on the surface of said second conductive type base region;
- and
- a source region narrowing section which partially limits width dimensions on a plane of said first conductive type source region is formed on diagonal lines on a rectangular surface of said trench-structured rectangular unit cells and in a vicinity of said diagonal lines of said trench-structured rectangular unit cells, wherein said diagonal lines extend from corners of said rectangular surface towards a center of said rectangular surface, and said source region narrowing section has a width which is less than a width of other sections of said first conductive type source region.
Dependencies are inferred from the claim text.