Gate commutated turn-off semiconductor device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorKazunori Taguchi
Life of this patent
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Abstract
A first cathode flange (14) provided with branch-like protrusions (14d) extending towards substantially its outer periphery and a gate flange (15) provided with branch-like protrusions (15c) extending towards substantially its outer periphery are connected to a cathode electrode (7a) and a gate electrode (7b), respectively, formed on one surface of a gate drive substrate (7). With this structure, a gate commutated turn-off semiconductor device which eliminates the necessity of a gate spacer and a cathode spacer and allows reduction in time and cost required for manufacture can be achieved.
Claims12
A gate commutated turn-off semiconductor device, comprising:
- a gate commutated turn-off semiconductor element having an anode, a cathode and a gate, for commutating a main current flowing from said anode to said cathode into a side of said gate at a turn-off;
- a gate driver for controlling a current flowing in said gate;
- and
- a substrate provided with a circuit pattern on its surface, said circuit pattern electrically connecting said gate and said cathode of said gate commutated turn-off semiconductor element to said gate driver to form an electrical loop,
- wherein said gate commutated turn-off semiconductor element has a semiconductor substrate having a cathode region, an anode region and a gate region, in which said gate region is formed on an outer peripheral side of one main surface, said cathode region is formed inside said gate region of said one main surface and said anode region is formed on the other main surface opposed to said one main surface;
- a gate electrode in a ring shape connected electrically to said gate region;
- a cathode post electrode connected electrically to said cathode region;
- an anode post electrode connected electrically to said anode region;
- an insulating tube being electrically insulative, provided so as to surround said anode post electrode and said cathode post electrode and internally containing at least said semiconductor substrate and said gate electrode;
- a gate flange having an inner peripheral side connected electrically to said gate electrode and an outer peripheral edge portion protruding from a side surface of said insulating tube;
- and
- a cathode flange connected electrically to said cathode post electrode,
- wherein said cathode flange and said gate flange each include a plurality of individual branch-like protrusions extending towards an outer periphery thereof,
- said cathode of said gate commutated turn-off semiconductor element is electrically connected to said substrate and said cathode flange is fixed to said substrate with said branch-like protrusions interposed therebetween, and
- said gate of said gate commutated turn-off semiconductor element is electrically connected to said substrate and said gate flange is fixed to said substrate with said branch-like protrusions interposed therebetween, and
- wherein the cathode and gate flanges are fixed to the substrate without spacers disposed therebetween.
Dependencies are inferred from the claim text.