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US 6,444,818 B2Granted
Metal complexes with chelating C-, N-donor ligands for forming metal-containing films
AssigneeMicron Technology, Inc.
InventorsStefan Uhlenbrock, Brian A. Vaartstra
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Abstract
A method of forming a film on a substrate using transition metal or lanthanide complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
Claims9
A precursor composition comprising one or more complexes of the formula:
- wherein:
- M is a transition metal;
- each R group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group, with the proviso that R3 and R4 are not both H, optionally any of the R groups are joined together to form a ring or rings, and optionally the R groups are replaced by multiple bonds between atoms;
- each L group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a silylated hydrocarbyl group, or a halide;
- x=1 to 3;
- n=0 to 4;
- y=0 to 4;
- and
- further wherein the precursor composition includes at least two complexes containing different metals.
6 more elements
Dependencies are inferred from the claim text.