Methods for removing silicon-oxy-nitride layer and wafer surface cleaning
AssigneeUnited Microelectronics Corp.
InventorMing-Sheng Tsai
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Abstract
Methods for removing a silicon-oxy-nitride layer and wafer surface cleaning are disclosed. The method for removing a silicon-oxy-nitride layer utilizes a solution of ethylene glycol and hydrogen fluoride to completely remove the silicon-oxy-nitride layer from a substrate. Moreover, the method for wafer surface cleaning also uses a solution of ethylene glycol and hydrogen fluoride to remove chemical oxide or native oxide from wafer surfaces and an ethylene glycol solvent to rinse the wafer surfaces.
Claims14
A method for removing a silicon-oxy-nitride layer, said method comprising:
- providing a substrate having a silicon-oxy-nitride layer thereon;
- and immersing said substrate in a solution of ethylene glycol and hydrogen fluoride at a temperature.
A method for wafer surface cleaning, said method comprising:
- providing a wafer surface;
- rinsing said wafer surface by using deionized water;
- immersing said wafer surface in a solution of ethylene glycol and hydrogen fluoride;
- displacing said wafer surface from said solution;
- and
- rinsing said wafer surface by using a ethylene glycol solvent.
A method for wafer surface cleaning, said method comprising:
- providing a wafer surface;
- cleaning said wafer surface by using a first solution;
- rinsing said wafer surface by using deionized water;
- cleaning said wafer surface by using a second solution;
- rinsing said wafer surface by using deionized water;
- immersing said wafer surface in a solution of ethylene glycol and hydrogen fluoride;
- displacing said wafer surface from said solution;
- and
- rinsing said wafer surface by using a ethylene glycol solvent.
Dependencies are inferred from the claim text.