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US 6,444,579 B1Granted
Methods of forming low resistivity titanium silicide structures
AssigneeMicron Technology, Inc.
InventorYongjun Hu
Life of this patent
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Abstract
Methods and apparatus for forming a conductor layer utilize an implanted matrix to form C54-titanium silicide. Word line stacks formed by the methods of the invention are used in sub-0.25 micron line width applications, interconnects, and silicided source/drain regions, among other applications, and have a lower resistivity and improved thermal stability.
Claims40
A method for forming titanium silicide in a semiconductor structure, comprising:
- providing a layer of silicon;
- forming a single implanted matrix comprising a combination of Group VIA and VB elements in the layer of silicon;
- depositing titanium on the implanted matrix;
- and
- annealing to form titanium silicide.
2 more elements
A method for forming titanium silicide in a semiconductor structure, comprising:
- providing a layer of polysilicon;
- forming a single implanted matrix comprising a combination of Group VIA and VB elements in the layer of polysilicon;
- depositing titanium on the implanted matrix;
- and
- annealing to form titanium suicide.
2 more elements
A method for forming titanium silicide in a semiconductor structure, comprising:
- implanting at least one Group VIA element into a layer of silicon and implanting at least one Group VB element into the layer of silicon, thereby forming a single implanted matrix containing the at least one Group VIA element and the at least one Group VB element in the layer of silicon;
- depositing titanium on the implanted matrix;
- and
- annealing to form titanium silicide.
1 more element
A method for forming titanium silicide in a semiconductor structure, comprising:
- implanting at least one Group VIA element into a layer of silicon and implanting at least one Group VB element into the layer of silicon, thereby forming a single implanted matrix containing the at least one Group VIA element and the at least one Group VB element in the layer of silicon, wherein the at least one Group VIA element and the at least one Group VB element have a combined dose of approximately 5×1011 to 1×1014 atoms/cm2;
- depositing titanium on the implanted matrix;
- and
- annealing to form titanium silicide.
1 more element
A method for forming titanium silicide in a semiconductor structure, comprising:
- implanting at least one Group VIA element into a layer of polysilicon and implanting at least one Group VB element into the layer of polysilicon, thereby forming a single implanted matrix containing the at least one Group VIA element and the at least one Group VB element in the layer of polysilicon;
- depositing titanium on the implanted matrix;
- and
- annealing to form titanium silicide.
1 more element
A method for forming titanium silicide in a semiconductor structure, comprising:
- implanting at least one Group VIA element into a layer of polysilicon and implanting at least one Group VB element into the layer of polysilicon, thereby forming a single implanted matrix containing the at least one Group VIA element and the at least one Group VB element in the layer of polysilicon, wherein the at least one Group VIA element and the at least one Group VB element have a combined dose of approximately 5×1011 to 1×1014 atoms/cm2;
- depositing titanium on the implanted matrix;
- and
- annealing to form titanium silicide.
1 more element
A method for forming titanium silicide in a semiconductor structure, comprising:
- implanting at least one Group VIA element selected from the group consisting of molybdenum and tungsten into a layer of silicon and implanting at least one Group VB element selected from the group consisting of nitrogen, phosphorus, arsenic and antimony into the layer of silicon, thereby forming a single implanted matrix containing the at least one Group VIA element and the at least one Group VB element in the layer of silicon;
- depositing titanium on the implanted matrix;
- and
- annealing to form titanium silicide.
1 more element
A method for forming titanium silicide in a semiconductor structure, comprising:
- implanting at least one Group VIA element selected from the group consisting of molybdenum and tungsten into a layer of silicon and implanting at least one Group VB element selected from the group consisting of nitrogen, phosphorus, arsenic and antimony into the layer of silicon, thereby forming a single implanted matrix containing the at least one Group VIA element and the at least one Group VB element in the layer of silicon, wherein the at least one Group VIA element and the at least one Group VB element have a combined dose of approximately 5×1011 to 1×1014 atoms/cm2;
- depositing titanium on the implanted matrix;
- and
- annealing to form titanium silicide.
1 more element
A method for forming titanium silicide in a semiconductor structure, comprising:
- implanting at least one Group VIA element selected from the group consisting of molybdenum and tungsten into a layer of polysilicon and implanting at least one Group VB element selected from the group consisting of nitrogen, phosphorus, arsenic and antimony into the layer of polysilicon, thereby forming a single implanted matrix containing the at least one Group VIA element and the at least one Group VB element in the layer of polysilicon;
- depositing titanium on the implanted matrix;
- and
- annealing to form titanium silicide.
1 more element
A method for forming titanium silicide in a semiconductor structure, comprising:
- implanting at least one Group VIA element selected from the group consisting of molybdenum and tungsten into a layer of polysilicon and implanting at least one Group VB element selected from the group consisting of nitrogen, phosphorus, arsenic and antimony into the layer of polysilicon, thereby forming a single implanted matrix containing the at least one Group VIA element and the at least one Group VB element in the layer of polysilicon, wherein the at least one Group VIA element and the at least one Group VB element have a combined dose of approximately 5×1011 to 1×1014 atoms/cm2;
- depositing titanium on the implanted matrix;
- and
- annealing to form titanium silicide.
1 more element
A method for forming titanium silicide in a semiconductor structure, the method comprising:
- providing a substrate;
- providing a gate oxide layer, coupled to the substrate;
- providing a silicon based material layer, coupled to the gate oxide layer;
- forming a single implanted matrix comprising a combination of Group VIA and VB elements in the layer of silicon;
- forming a titanium silicide layer comprising low resistivity titanium silicide with reduced grain size by depositing titanium on the implanted matrix and annealing to form titanium silicide;
- and
- wherein the grain size of the low resistivity titanium silicide is less than about 0.25.
4 more elements
A method for forming titanium silicide in a semiconductor structure, the method comprising:
- providing a substrate;
- providing a source/drain region supported by a substrate;
- forming a titanium silicide layer coupled to the source/drain region, wherein the titanium silicide layer comprises low resistivity titanium silicide with reduced grain size, achieved by implanting a single matrix layer into a silicon based material, layering with titanium and heating;
- and
- wherein the grain size of the low resistivity titanium suicide layer is less than about 0.25 microns.
2 more elements
A method for forming titanium silicide in a semiconductor structure, the method comprising:
- forming a semiconductor layer comprising low resistivity titanium suicide with reduced grain size by:
- providing a silicon based material;
- implanting a single matrix layer into the silicon based material;
- layering with titanium;
- heating;
- and
- wherein the grain size of the low resistivity titanium silicide is less than about 0.25 microns.
4 more elements
A method for forming a semiconductor layer comprising titanium silicide having a C54 TiSi2 lattice structure comprising implanting a single matrix layer into a silicon based material, layering with titanium and heating, wherein the titanium silicide has a grain size of less than about 0.25 microns.
A method for forming a semiconductor structure, comprising:
- providing a substrate;
- providing a gate oxide layer, coupled to the substrate;
- providing a semiconductor layer coupled to the gate oxide layer;
- forming a titanium silicide layer having a C54 TiSi2 lattice structure, wherein a grain size of the titanium silicide layer is less than about 0.25 microns and wherein the titanium silicide layer comprises low resistivity titanium silicide with reduced grain size, by implanting a single matrix layer into a silicon based material, layering with titanium and heating;
- and
- wherein the semiconductor layer is between the gate oxide layer and the titanium silicide layer.
3 more elements
A method for forming a semiconductor structure, comprising:
- providing a substrate;
- providing a source/drain region supported by a substrate;
- forming a titanium suicide layer having a C54 TiSi2 lattice structure, coupled to the source/drain region, wherein the titanium silicide layer comprises low resistivity titanium suicide with reduced grain size, by implanting a single matrix layer into a silicon based material, layering with titanium and heating;
- and
- wherein the titanium silicide layer has a grain size of less than about 0.25 microns.
2 more elements
A method for forming titanium silicide in a semiconductor structure, consisting essentially of:
- providing a layer of silicon;
- forming one implanted matrix comprising a combination of Group VIA and VB elements in the layer of silicon;
- depositing titanium on the implanted matrix;
- and
- annealing to form titanium silicide.
2 more elements
A method for forming titanium silicide in a semiconductor structure, consisting essentially of:
- providing a layer of polysilicon;
- forming one implanted matrix comprising a combination of Group VIA and VB elements in the layer of polysilicon;
- depositing titanium on the implanted matrix;
- and
- annealing to form titanium silicide.
2 more elements
A method for forming titanium silicide in a semiconductor structure, consisting essentially of:
- implanting at least one Group VIA element into a layer of silicon and implanting at least one Group VB element into the layer of silicon, thereby forming one implanted matrix containing the at least one Group VIA element and the at least one Group VB element in the layer of silicon;
- depositing titanium on the implanted matrix;
- and
- annealing to form titanium silicide.
1 more element
A method for forming titanium silicide in a semiconductor structure, consisting essentially of:
- implanting at least one Group VIA element into a layer of silicon and implanting at least one Group VB element into the layer of silicon, thereby forming one implanted matrix containing the at least one Group VIA element and the at least one Group VB element in the layer of silicon, wherein the at least one Group VIA element and the at least one Group VB element have a combined dose of approximately 5×1011 to 1×1014 atoms/cm2;
- depositing titanium on the implanted matrix;
- and
- annealing to form titanium silicide.
1 more element
A method for forming titanium silicide in a semiconductor structure, consisting essentially of:
- implanting at least one Group VIA element into a layer of polysilicon and implanting at least one Group VB element into the layer of polysilicon, thereby forming one implanted matrix containing the at least one Group VIA element and the at least one Group VB element in the layer of polysilicon;
- depositing titanium on the implanted matrix;
- and
- annealing to form titanium silicide.
1 more element
A method for forming titanium silicide in a semiconductor structure, consisting essentially of:
- implanting at least one Group VIA element into a layer of polysilicon and implanting at least one Group VB element into the layer of polysilicon, thereby forming one implanted matrix containing the at least one Group VIA element and the at least one Group VB element in the layer of polysilicon, wherein the at least one Group VIA element and the at least one Group VB element have a combined dose of approximately 5×1011 to 1×1014 atoms/cm2;
- depositing titanium on the implanted matrix;
- and
- annealing to form titanium silicide.
1 more element
A method for forming titanium silicide in a semiconductor structure, consisting essentially of:
- implanting at least one Group VIA element selected from the group consisting of molybdenum and tungsten into a layer of silicon and implanting at least one Group VB element selected from the group consisting of nitrogen, phosphorus, arsenic and antimony into the layer of silicon, thereby forming one implanted matrix containing the at least one Group VIA element and the at least one Group VB element in the layer of silicon;
- depositing titanium on the implanted matrix;
- and
- annealing to form titanium silicide.
1 more element
A method for forming titanium silicide in a semiconductor structure, consisting essentially of:
- implanting at least one Group VIA element selected from the group consisting of molybdenum and tungsten into a layer of silicon and implanting at least one Group VB element selected from the group consisting of nitrogen, phosphorus, arsenic and antimony into the layer of silicon, thereby forming one implanted matrix containing the at least one Group VIA element and the at least one Group VB element in the layer of silicon, wherein the at least one Group VIA element and the at least one Group VB element have a combined dose of approximately 5×1011 to 1×1014 atoms/cm2;
- depositing titanium on the implanted matrix;
- and
- annealing to form titanium silicide.
1 more element
A method for forming titanium silicide in a semiconductor structure, consisting essentially of:
- implanting at least one Group VIA element selected from the group consisting of molybdenum and tungsten into a layer of polysilicon and implanting at least one Group VB element selected from the group consisting of nitrogen, phosphorus, arsenic and antimony into the layer of polysilicon, thereby forming one implanted matrix containing the at least one Group VIA element and the at least one Group VB element in the layer of polysilicon;
- depositing titanium on the implanted matrix;
- and
- annealing to form titanium silicide.
1 more element
A method for forming titanium silicide in a semiconductor structure, consisting essentially of:
- implanting at least one Group VIA element selected from the group consisting of molybdenum and tungsten into a layer of polysilicon and implanting at least one Group VB element selected from the group consisting of nitrogen, phosphorus, arsenic and antimony into the layer of polysilicon, thereby forming one implanted matrix containing the at least one Group VIA element and the at least one Group VB element in the layer of polysilicon, wherein the at least one Group VIA element and the at least one Group VB element have a combined dose of approximately 5×1011 to 1×1014 atoms/cm2;
- depositing titanium on the implanted matrix;
- and
- annealing to form titanium silicide.
1 more element
Dependencies are inferred from the claim text.