Method of fabricating a semiconductor device having increased breakdown voltage

A method of forming a transistor, said method comprising

• providing a silicon substrate on which said transistor is to be fabricated;
• fabricating first and second field oxide areas on said silicon substrate, said field oxide areas having respective boundaries forming first and second bird's beaks at said boundaries;
• doping a first region of said silicon substrate, said first region having a first boundary adjoining the boundary of said first field oxide area and a second boundary extending along an edge thereof opposite of the first boundary;
• doping a second region of said silicon substrate, said second region having a first boundary adjoining the boundary of said second field oxide area and a second boundary extending along an edge thereof opposite of the first boundary;
• depositing a silicon dioxide mask layer over said field oxide areas and a portion of said first and second doped regions to overly said first and second bird's beaks and the second boundaries of the first and second doped regions, said mask layer leaving a portion of said first and second doped regions exposed;
• depositing a metal on at least part of the exposed portions of said first and second doped regions of said substrate;
• processing said metal to form respective silicide layers covering at least part of the exposed portions of said first and second doped regions of said substrate;
• and
• forming an insulating layer on said field oxide layers, the mask layer and portions of the suicide layers.

A method of forming a semiconductor structure on a substrate, comprising:

• fabricating a field oxide layer on the substrate, the field oxide layer having a boundary along at least one edge thereof;
• doping a region of the substrate, the region having a first boundary adjoining the boundary of the field oxide layer and further having a second boundary extending along an edge thereof opposite of the first boundary;
• forming a silicon dioxide mask layer over the field oxide layer and the first boundary of the doped region, and over the second boundary of the doped region, the mask layer leaving a portion of the doped region exposed;
• forming a silicide layer covering at least part of the exposed portion of the doped region of the substrate;
• and
• forming an insulating on said field oxide layers, the mask layer and portions of the silicide layer.

A method of forming a transistor in a semiconductor substrate, the method comprising:

• fabricating first and second field oxide areas on the substrate, the field oxide areas having respective boundaries;
• doping a first region of the substrate, the first doped region having a first boundary adjoining the boundary of the first field oxide area and a second boundary extending along an edge thereof opposite of the first boundary;
• doping a second region of the substrate, the second doped region having a first boundary adjoining the boundary of the second field oxide area and a second boundary extending along an edge thereof opposite of the first boundary;
• depositing a silicon dioxide mask layer over the first and second field oxide layer and the first boundaries of the first and second doped regions, respectively, and further over the second boundaries of the first and second doped regions, the mask layer leaving a portion of the first and second doped regions exposed;
• forming silicide layers covering at least part of the exposed portions of the first and second doped regions;
• and
• forming an insulating layer on said field oxide layers, the mask layer and portions of the silicide layers.