Method of manufacturing a multi-layered wiring structure for interconnecting semiconductor devices by patterning resist and antireflective films to define wiring grooves
AssigneeKabushiki Kaisha Toshiba
InventorHidenori Shibata
Life of this patent
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Abstract
After a contact hole is filled with an antireflection film and a resist film, the resist film is patterned such that the resist film of an area larger than the opening of the portion where the contact hole is to be formed is left above the contact hole. The antireflection film is removed with the patterned resist film used as a mask, followed by forming a second interlayer film on the entire surface. The second interlayer film is planarized so as to expose at least the upper surface of the resist film to the outside. Then, the resist film and the antireflection film are removed so as to form a contact hole and a groove.
Claims12
A method of manufacturing a semiconductor device, comprising the steps of:
- selectively forming a wiring;
- forming a first interlayer film on the wiring;
- forming a first antireflection film on the first interlayer film;
- forming a first resist film on the first antireflection film;
- patterning the first resist film, followed by removing the first antireflection film and the first interlayer film with the patterned first resist film used as a mask so as to form a contact hole exposing a portion of the top surface of the wiring to the outside;
- removing the first resist film;
- forming a second antireflection film so as to cover at least the bottom surface of the contact hole;
- forming a second resist film on the second antireflection film;
- patterning the second resist film to permit the second resist film to remain over the contact hole;
- removing the second antireflection film with the patterned second resist film used as a mask so as to expose a portion of the top surface of the first interlayer film to the outside;
- forming a second interlayer film so as to cover the patterned second resist film and the second antireflection film;
- removing the second interlayer film so as to expose at least the entire top surface of the patterned second resist film to the outside;
- and
- removing the patterned second resist film and the second antireflection film so as to form a groove in the second interlayer film.
A method of manufacturing a semiconductor device, comprising the steps of:
- selectively forming a wiring;
- forming a first interlayer film on the wiring;
- forming a first antireflection film on the first interlayer film;
- forming a first resist film on the first antireflection film;
- patterning the first resist film, followed by removing the first antireflection film and the first interlayer film with the patterned first resist film used as a mask so as to form a contact hole exposing a portion of the top surface of the wiring to the outside;
- removing the first resist film;
- forming a lower film of a second antireflection film so as to fill the contact hole;
- forming an upper film of the second antireflection film on the lower film of the second antireflection film;
- forming a second resist film on the upper film of the second antireflection film;
- patterning the second resist film to permit the second resist film to remain over the contact hole;
- patterning the upper film of the second antireflection film with the patterned second resist film used as a mask;
- patterning the lower film of the second antireflection film with the patterned upper film of the second antireflection film used as a mask so as to expose a portion of the top surface of the first interlayer film to the outside;
- forming a second interlayer film so as to cover the upper film and the lower film of the second antireflection film;
- removing the second interlayer film and the upper film of the second antireflection film so as to expose at least the entire upper surface of the lower film of the second antireflection film;
- and
- removing the lower film of the second antireflection film so as to form a groove in the second interlayer film.
Dependencies are inferred from the claim text.