Method for fabricating semiconductor device

A method for fabricating a semiconductor device, the method comprising:

• forming an isolating film for defining an active region on a semiconductor substrate;
• forming a gate insulating film over the whole surface of the structure;
• forming on the gate insulating film a gate electrode where a mask insulating film pattern is stacked;
• forming an insulating film spacer at the sidewalls of the gate electrode and the mask insulating film pattern;
• forming source/drain regions at both sides of the insulating film spacer on the semiconductor substrate;
• forming a pad polycrystalline silicon layer pattern on the semiconductor substrate where a bit line contact and a storage electrode contact will be formed, and at the sidewalls of the insulating film spacer;
• forming a contact plug according to a selective epitaxial growth method using the pad polycrystalline silicon layer pattern as a seed;
• forming a planarization film over the whole surface of the structure;
• and
• forming a contact hole by etching the planarization film by using a contact mask for exposing the contact plug as an etching mask.