Junction formation with diffusion barrier for silicide contacts and method for forming
AssigneeUniversity of Houston
InventorsWanda Zagozdson-Wosik, Jia Li
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Abstract
Method and apparatus are provided for a semiconductor device including a junction and contact having a diffusion barrier to control silicidation of a silicon substrate. A dopant is applied in excess of an amount required to form a junction and the dopant chemically reacts with a metal to form a compound which serves as a barrier layer to prevent silidication in the substrate.
Claims14
A method for forming a junction and contact on a silicon substrate, comprising the steps of:
- applying a selected amount of dopant to a silicon substrate, the amount being sufficient to leave an excess of dopant on the surface when the junction is formed from the dopant;
- applying a first layer of amorphous silicon over the dopant;
- applying a first rapid thermal processing to form the junction by diffusion;
- applying a layer of a metal which forms a silicide;
- applying a second amorphous silicon layer;
- and
- applying a second rapid thermal processing to form the contact and a barrier layer formed from reaction of the dopant and the metal which forms a silicide.
A method for forming a junction and contact on a silicon substrate, comprising the steps of:
- applying a layer of dopant to a silicon substrate, the amount being sufficient to leave an excess of dopant on the substrate when the junction is formed from the dopant;
- applying a first layer of amorphous silicon over the dopant;
- applying a layer of a metal which forms a silicide over the first layer of amorphous silicon;
- applying a second layer of amorphous silicon over the metal;
- and
- rapid thermal processing to form the contact, junction and a barrier layer formed from a reaction between the dopant and the metal which forms a silicide.
A method for forming a junction and contact on a silicon substrate, comprising the steps of:
- applying a selected amount of a dopant to a silicon substrate, the amount being sufficient to leave an excess of dopant on the surface when the junction is formed from the dopant;
- applying a layer of a metal;
- and
- applying a rapid thermal processing to form the junction and a barrier layer from reaction of the dopant and the metal.
Dependencies are inferred from the claim text.