Method of preparing a capacitor on integrated circuit device containing isolated dielectric material
AssigneeMicron Technology, Inc.
InventorKarl M. Robinson
Life of this patent
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Abstract
A capacitor comprising a first electrode, a second electrode, and a dielectric material and an organic isolation matrix forming at least one layer between the first and second electrodes is provided. Also provided are other integrated circuit devices containing a dielectric material and an organic isolation matrix in contact with the dielectric material.
Claims22
A method of preparing a capacitor on an integrated circuit device, the method comprising:
- (a) depositing a first material to form a first electrode;
- (b) depositing a dielectric material and an organic material on the first electrode;
- and
- (c) depositing a second material to form a second electrode such that the dielectric material and the organic material form at least one layer between the first and second electrodes and the organic material isolates the dielectric material from the first and second electrodes.
A method of preparing an integrated circuit device comprising depositing a dielectric material and an organic material in contact with the dielectric material such that the dielectric material is isolated by the organic material.
A method of preparing an integrated circuit device comprising depositing fullerene molecules and a high dielectric material having a dielectric constant of at least about 10 such that the fullerene molecules encapsulate and isolate the high dielectric material.
A method of preparing a capacitor on an integrated circuit device, the method comprising:
- (a) depositing a first material to form a first electrode;
- (b) depositing a high dielectric material having a dielectric constant of at least about 10 and fullerene molecules on the first electrode, wherein depositing comprises spiralling graphite sheets in the presence of the high dielectric material in the vapor phase;
- and
- (c) depositing a second material on the high dielectric material and fullerene molecules to form a second electrode.
A method of preparing a capacitor on an integrated circuit device, the method comprising:
- (a) depositing a first material to form a first electrode;
- (b) depositing a high dielectric material having a dielectric constant of at least about 10 and fullerene molecules on the first electrode, wherein depositing comprises accelerating fullerene molecules toward each other in the presence of the high dielectric material;
- and
- (c) depositing a second material on the high dielectric material and fullerene molecules to form a second electrode.
A method of preparing a capacitor on an integrated circuit device, the method comprising:
- (a) depositing a first material to form a first electrode;
- (b) depositing a high dielectric material having a dielectric constant of at least about 10 and fullerene molecules on the first electrode, wherein depositing comprises electrochemically oxidizing a metal while in the presence of fullerene molecules to incorporate metal oxide molecules in the fullerene molecules;
- and
- (c) depositing a second material on the high dielectric material and fullerene molecules to form a second electrode.
A method of preparing a capacitor on an integrated circuit device, the method comprising:
- (a) depositing a first material to form a first electrode;
- (b) coating a dispersion of a high dielectric material having a dielectric constant of at least about 10 and a particle size of about 10 Angstroms to about 50 Angstroms in an organic polymer on the first electrode to form a film having a thickness of about 10 Angstroms to about 100 Angstroms;
- and
- (c) depositing a second material on the high dielectric material and organic polymer to form a second electrode.
Dependencies are inferred from the claim text.