SOI semiconductor device opening implantation gettering method

Abstract

The present invention relates to a method of manufacturing a semiconductor device, including the steps of providing a silicon-on-insulator semiconductor wafer having a silicon film formed on an insulator layer; forming a semiconductor device in the silicon film, the semiconductor device including a semiconductor element, an interlayer dielectric over the semiconductor device, and at least one opening passing through the interlayer dielectric and in communication with the semiconductor element; implanting inert atoms into the semiconductor element by passing the inert atoms through the opening at an energy and at a dose sufficient to form a damaged region in the semiconductor element, wherein the oxide insulating layer acts as a mask to block implantation of the inert atoms into other portions of the semiconductor device, and the damaged region comprises gettering sites; and subjecting the semiconductor device to conditions to getter at least one impurity into the gettering sites from adjacent portions of the semiconductor device.

Dependencies are inferred from the claim text.