Thin film transistor (TFT) structure with planarized gate electrode

Abstract

Within a method for forming a thin film transistor (TFT) structure, there is first provided a substrate. There is then formed over the substrate a gate electrode. There is then formed adjacent to the gate electrode but not covering a top surface of the gate electrode a backfilling dielectric layer. There is then formed over and covering the top surface of the gate electrode a gate dielectric layer. There is then formed over and covering the gate dielectric layer an active semiconductor layer. Finally, there is then formed over and in electrical communication with the active semiconductor layer a pair of source/drain electrodes, where the pair of source/drain electrodes having a separation distance which defines a channel region of the active semiconductor layer. The method for forming the thin film transistor (TFT) structure contemplates a thin film transistor (TFT) structure fabricated in accord with the method for forming the thin film transistor (TFT) structure. The method provides the thin film transistor (TFT) structure with enhanced functionality and reliability.

Dependencies are inferred from the claim text.