US 6,444,504 B1 · Multilayer ZnO polycrystallin diode

Abstract

A method of manufacturing a multilayer ZnO polycrystalline diode that protects against electrostatic discharges, over-current, and voltage surges overcoming the aforementioned drawbacks is provided. The present invention further includes preparing a plurality of oxide additives and homogenizing the oxide additives with ZnO. A plurality of polycrystalline layers is then formed having a thickness of approximately 20 to 60 microns. The method further includes forming a plurality of polycrystalline layers, each having a thickness of approximately 20 to 60 microns, printing an inner electrode on each polycrystalline layer, forming a compact block with the polycrystalline layers, cutting the compact block into a plurality of chips, scorching and sintering the plurality of chips, forming a plurality of outer electrodes, scorching the outer electrodes, and placing at least two of the outer electrodes on each chip.

Claims18

Dependent claims

A method of manufacturing a multilayer ZnO polycrystalline diode comprising the steps of:

(a) preparing a plurality of oxide additives selected from the group consisting of Bi2O3, Mn3O4, Co3O4, Sb2O3, Fe2O3, and Nb2O5;
(b) homogenizing the plurality of oxide additives with ZnO;
(c) forming a plurality of polycrystalline layers, each having a thickness of approximately 20 to 60 microns;
(d) printing an inner electrode on each polycrystalline layer;
(e) forming a compact block with the polycrystalline layers;
(f) cutting the compact block into a plurality of chips;
(g) scorching and sintering the plurality of chips;
(h) forming a plurality of outer electrodes;
(i) scorching the outer electrodes;
and
(j) placing at least two of the outer electrodes on each chip.

8 more elements

Dependencies are inferred from the claim text.

Multilayer ZnO polycrystallin diode

Life of this patent

Multilayer ZnO polycrystallin diode

Life of this patent

Abstract

Claims18