Method of improving photoresist profile
AssigneeUnited Microelectronics Corp.
InventorsI-Hsiung Huang, Anseime Chen, Chieh-Ming Wang
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Abstract
A method of improving a photoresist profile. After a photoresist layer is developed, a hard bake is performed at a temperature lower than a glass transition temperature of the photoresist layer. The photoresist layer is thus able to reflow, so that the profile can be modified. Or alternatively, the hard bake step can be replace by first performing a hard bake at a temperature higher than the glass transition temperature, followed by performing a flow bake at a temperature lower than the glass transition temperature.
Claims13
A method of improving a photoresist profile for a semiconductor manufacturing, the method comprising:
- forming a photoresist layer;
- performing a soft bake on the photoresist layer;
- performing an exposure step on the photoresist layer;
- performing a post-exposure bake step on the photoresist layer;
- performing a development step on the photoresist layer so as to form an opening
- in the photoresist layer;
- and
- performing a hard bake step at a temperature higher than a glass transition temperature of the photoresist layer on the photoresist layer so that any reentrant structures formed in the opening in the photoresist layer is effectively eliminated rendering a sidewall of said opening substantially vertical.
A method of improving a photoresist profile for a semiconductor manufacturing, the method comprising:
- forming a photoresist layer with a pattern having at least one opening;
- performing a hard bake step at a temperature lower than a glass transition temperature of the photoresist layer on the photoresist layer;
- and
- performing a flow bake step at a temperature higher than the glass transition temperature of the photoresist layer on the photoresist layer so that any reentrant structures formed in the opening is effectively eliminated rendering a sidewall of the opening substantially vertical.
Dependencies are inferred from the claim text.