Method for manufacturing a semiconductor wafer using a mask that has several regions with different scattering ability

A method for manufacturing a semiconductor structure:

• positioning a semiconductor wafer in proximity to a mask, the mask having a plurality of exposure windows wherein each exposure window includes a skirt region containing a skirt structure and a patterned feature region containing first patterned features overlying a membrane, the skirt structure having a first electron scattering ability and the first patterned features having a second electron scattering ability;
• projecting an electron beam through each exposure window on the mask wherein electrons passing through the skirt structure of each exposure window are scattered to a greater degree than electrons passing through the first patterned features;
• and
• focusing the electron beam after projecting it through each exposure window on the mask toward a back focal plane filter having an aperture that selectively inhibits passing of electrons based upon a degree of scattering so that the first patterned features are exposed onto a patterning layer on the semiconductor wafer.