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US 6,444,265 B1Granted
Method for producing a titanium monophosphide layer and its use
AssigneeFraunhofer-Gesellschaft zur Foerderung der Angewandten Forchung E.V.
InventorsBarbara Fröschle, Roland Leutenecker, Peter Ramm
Life of this patent
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Abstract
In a method for producing a titanium monophosphide layer, a carrier is first placed in a reactor. Thereafter, a TiN layer is deposited on the carrier by supplying TiCl4 ad NH3 into the reactor. The TiN layer is annealed immediately after deposition of the TiN layer while PH3 is supplied to the reactor, in order to form the titanium monophosphide layer on the TiN layer.
Claims11
A method for producing a titanium monophosphide layer (TiP) comprising the following steps:
- a) p lading a substrate in a reactor,
- b) depositing a TiN layer on the substrate by supplying TiCl4 and NH3 to the reactor, and
- c) annealing the TiN layer while supplying PH3 to the reactor immediately after deposition of the TiN layer, so as to form the titanium monophosphide layer on the TiN layer.
Dependencies are inferred from the claim text.