Self-aligned SiGe NPN with improved ESD robustness using wide emitter polysilicon extension
AssigneeInternational Business Machines Corporation
InventorsLouis D. Lanzerotti, Steven H. Voldman
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Abstract
A semiconductor bipolar transistor structure having improved electrostatic discharge (ESD) robustness is provided as well as a method of fabricating the same. Specifically, the inventive semiconductor structure a semiconductor structure comprises a bipolar transistor comprising a lightly doped intrinsic base; a heavily doped extrinsic base adjacent to said intrinsic base, a heavily doped/lightly doped base doping transition edge therebetween, said heavily doped/lightly doped base doping transition edge defined by an edge of a window; and a silicide region extending on said extrinsic base, wherein said silicide region is completely outside said window.
Claims18
A bipolar transistor comprising:
- a substrate having a subcollector located atop a surface of the substrate;
- a Si-containing layer present atop said subcollector, said Si-containing layer having isolation regions therein, each isolation region containing an inner edge;
- a SiGe-containing layer present atop said Si-containing layer, said SiGe-containing layer comprising a single-crystal SiGe-containing region and abutting polycrystalline SiGe-containing regions;
- a facet region between said single-crystal SiGe-containing region and each polycrystalline SiGe-containing region;
- a patterned emitter located above said single-crystal SiGe-containing region and a portion of each polycrystalline SiGe-containing region;
- and
- a silicide region located above and contacting remaining portions of said polycrystalline SiGe-containing layer, wherein said silicide region is not located above said facet region and said silicide region does not extend beyond said inner edge of each isolation region.
A bipolar transistor comprising:
- a substrate having a subcollector located atop a surface of the substrate;
- a Si-containing layer present atop said subcollector, said Si-containing layer having isolation regions therein;
- a SiGe-containing layer present atop said Si-containing layer, said SiGe-containing layer comprising a single-crystal SiGe-containing region and abutting polycrystalline SiGe-containing regions;
- a facet region between said single-crystal SiGe-containing region and each polycrystalline SiGe-containing region;
- a patterned emitter located above said SiGe-containing layer;
- and
- a silicide region located above and contacting portions of said polycrystalline SiGe-containing layer, wherein said silicide region is not located above said facet region, is not in contact with said patterned emitter, and does not extend beyond an inner edge of said isolation regions.
Dependencies are inferred from the claim text.