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US 6,441,457 B1Granted
Fuse in semiconductor device and fabricating method thereof
AssigneeHyundai Electronics Industries Co., Ltd.
InventorHyun-Suck Park
Life of this patent
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Abstract
The semiconductor device includes a semiconductor substrate, an insulating layer on the semiconductor substrate wherein a groove is patterned to a predetermined depth in an upper surface of the insulating layer, a fuse layer at sidewalls and on a bottom of the groove, and a wire connected electrically to the fuse layer.
Claims5
A fuse in a semiconductor comprising:
- a semiconductor substrate;
- an insulating layer on the semiconductor substrate, wherein a groove is patterned to a predetermined depth in an upper surface of the insulating layer;
- a fuse layer at sidewalls and on a bottom of the groove;
- and
- a wire connected electrically to the fuse layer, wherein a thickness of the fuse layer becomes thin at an intersection between the sidewalls and the bottom of the groove.
2 more elements
Dependencies are inferred from the claim text.