Semiconductor device and a process for manufacturing the same
AssigneeSharp Kabushiki Kaisha
InventorsAkito Konishi, Akio Kawamura
Life of this patent
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Abstract
A semiconductor device comprises:a semiconductor substrate; a plurality of active regions for forming semiconductor elements, the active regions being formed on the semiconductor substrate; a device isolation region for separating the plural active regions from each other, the device isolation region including a trench region filled with an insulating film and a pseudo active region formed adjacent to the trench region; a wiring layer formed above the semiconductor substrate; and a pseudo conductive film formed on the device isolation region, wherein, if the pseudo conductive film is partially or entirely located under the wiring layer, the pseudo conductive film is formed only on the trench region.
Claims11
A semiconductor device comprising:
- a semiconductor substrate;
- a plurality of active regions for forming semiconductor elements, the active regions being formed on the semiconductor substrate;
- a device isolation region for separating the plural active regions from one another, the device isolation region including a trench region filled with an insulating film, and a pseudo active region formed adjacent to the trench region;
- a wiring layer formed above the semiconductor substrate through the intervention of an interlayer insulating film;
- and
- a pseudo conductive film formed on the device isolation region for preventing dishing of the interlayer insulating film,
- wherein, when the pseudo conductive film is partially or entirely located under the wiring layer, the entire pseudo conductive film is formed only on the trench region.
A semiconductor device comprising:
- a semiconductor substrate;
- a plurality of active regions for forming semiconductor elements, the active regions being formed on the semiconductor substrate;
- a device isolation region for separating the plural active regions from one another, the device isolation region including a trench region filled with an insulating film, and a pseudo active region formed adjacent to the trench region;
- a wiring layer formed above the semiconductor substrate through the intervention of an interlayer insulating film, the interlayer insulating film being a dielectric film whose upper surface is flat;
- and
- a conductive dummy pattern formed on the device isolation region for preventing dishing of the interlayer insulating film, the conductive dummy pattern not having any electrical function in circuitry;
- wherein, when the conductive dummy pattern is partially or entirely located under the wiring layer, the entire conductive dummy pattern is formed only on the trench region.
Dependencies are inferred from the claim text.