Low-voltage triggering pseudo bipolar ESD protection device for positive/negative signal input pads

Abstract

An electrostatic discharge (ESD) protection device for protecting semiconductor devices against high-voltage transients due to electrostatic discharges. It includes: (1) an N-type well formed in a P-type semiconductor layer (or P-substrate); (2) a plurality of first P+ regions formed in the P-type semiconductor layer, wherein each of the first P+ regions is connected to an input,pad and is formed inside the N-type well; (3) a plurality of second P+ regions formed in the P-type semiconductor layer, wherein each of the second P+ regions is connected to the ground, at least one of the second P+ regions is outside the N-type well, and at least one of the second P+ regions is either in the N-type well or adjacent to it; and (4) an N+ region formed outside of the N-type well. The plurality of first P+ regions, the plurality of second P+ regions, the N+ region, and the N-type well form a plurality of pnp devices connected in parallel to allow a transient voltage to be discharged from the input pad to ground. The N+ region, the P-substrate, and the N-well form an npn device, which is not directly connected to either the ground or the input pad and which allows the transient voltages to be discharged in a reverse direction.

Dependencies are inferred from the claim text.