US 6,441,391 B1 · Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrate

Abstract

An object of the present invention is to improve, in a group III nitride semiconductor device, the productivity, heat radiation characteristic and performance in the element high speed operation; upon a sapphire substrate in which an A plane (an (11-20) plane) is set to be the basal plane, an epitaxial growth layer of a group III nitride semiconductor is formed and, thereon, a gate electrode 16, a source electrode 15 and a drain electrode 17 are formed; these electrodes are disposed in such a way that a direction along which they are laid makes an angle within 20° with respect to a C axis of sapphire.

Claims3

Dependent claims

A semiconductor device which comprises a group III nitride semiconductor layer formed on a single crystal sapphire substrate, a source electrode and a drain electrode formed apart from each other on the surface of said group III nitride semiconductor layer, and a gate electrode formed between said source electrode and said drain electrode;

wherein
said group III nitride semiconductor layer is formed on an A plane of said single crystalline sapphire substrate;
and the source electrode, the drain electrode and the gate electrode are formed to lie along a direction which makes an angle within 20° with a C axis of said single crystalline sapphire substrate.

Dependencies are inferred from the claim text.

Facts

Application

09/940,374Filed 29 Aug 2001

Priority

JP 2000-2657831 Sep 2000

Published

US 2002/0047113 A125 Apr 2002

Granted

27 Aug 2002

Term ends

Not estimatedThe source records don’t support an estimate.

Classification4 codes

H10D 30/87
FETs having rectifying junction gate electrodes: fETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
H10D 62/405
Crystalline structures: orientations of crystalline planes
H10D 62/8503
Being Group III-V materials, e.g. GaAs: nitride Group III-V materials, e.g. AlN or GaN
H10D
Inorganic electric semiconductor devices

Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrate

Life of this patent

Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrate

Life of this patent

Abstract

Claims3