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US 6,440,873 B1Granted
Post metal etch cleaning method
AssigneeUnited Microelectronics Corp.
InventorsChih-Ning Wu, Chan-Lon Yang
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Abstract
A post metal etch cleaning method which begins by providing a wafer with an etched metal layer formed thereon, wherein the etched metal layer is covered with a polymer residue. A fluorine based organic acid solvent is used to clean the metal layer, followed by removing the solvent by a physical method. Next, a de-ionized water is applied to flush the metal layer before performing a drying step on the wafer to dry the metal layer.
Claims20
A post metal etch cleaning method, comprising:
- providing a substrate with a etched metal layer formed thereon, wherein the etched metal layer is covered with a polymer residue;
- rinsing the metal layer with a fluorine based organic acid solvent for removing the polymer residue;
- flushing the metal layer with a de-ionized water;
- and
- performing a drying step for removing the de-ionized water.
2 more elements
A method of forming a metal line, comprising:
- providing a substrate with a metal layer formed thereon;
- forming a photoresist layer on the metal layer, so that a portion of the metal layer is exposed;
- etching the exposed metal layer to form a metal line;
- removing the photoresist layer;
- rinsing the metal line with a fluorine based organic acid solvent;
- spinning off the fluorine based organic acid solvent on the wafer,
- flushing the metal line with a de-ionized water;
- and
- performing a drying step on the wafer for removing the de-ionized water.
6 more elements
Dependencies are inferred from the claim text.