Method of forming the capacitor with HSG in DRAM
AssigneeVanguard International Semiconductor Corporation
InventorHorng-Huei Tseng
Life of this patent
Estimating the term…
Abstract
The present invention discloses the method of forming the bottom electrode with HSG (hemispherical grain) layer on substrate, said substrate comprising a word line and an active region, said method comprising the steps of: depositing a confomal etch stop layer on said active region and said word line; forming a dielectric layer on said etch stop layer with planar top surface; forming a contact hole in said. dielectric layer and said etch stop layer to expose portions of said active region and said word line; depositing a first conductive layer on the surface of the contact hole; forming a hemishperical grain (HSG) layer on said first conductive layer; and removing said dielectric layer.
Claims16
A method of forming the bottom electrode with HSG (hemispherical grain) layer on substrate, said substrate comprising a word line and an active region, said method comprising the steps of:
- depositing a conformal etch stop layer on said active region and said word line;
- forming a dielectric layer on said etch stop layer with planar top surface;
- forming a contact hole in said dielectric layer and said etch stop layer to expose portions of said active region and said word line;
- depositing a conductive layer on the surface of the contact hole;
- forming a hemishperical grain (HSG) layer on said conductive layer;
- and
- removing said dielectric layer.
A method of forming a capacitor with HSG (hemispherical grain) layer substrate, said substrate comprising a word line and a active region, said method comprising the steps of:
- depositing a conformal etch stop layer on said active region and said word line;
- forming a sacrificial layer on said etch stop layer;
- depositing a mask layer with planar top surface on said sacrificial layer;
- forming a contact hole in said sacrificial layer, said mask layer and said etch stop layer to expose portions of said active region and said word line;
- depositing a silicon layer on the surface of the contact hole;
- forming a hemishperical grain (HSG) layer on said silicon layer;
- removing said masking layer and said sacrificial layer;
- forming a dielectric layer on said HSG layer;
- and
- forming a conductive layer on said dielectric layer.
Dependencies are inferred from the claim text.