Method and structure for a semiconductor fuse
AssigneeInternational Business Machines Corporation
InventorsTimothy Harrison Daubenspeck, William Thomas Motsiff, Jed Hickory Rankin
Life of this patent
Estimating the term…
Abstract
A semiconductor fuse structure having a conductive fuse material abutting a first and second conductive line is provided. The fuse of the present invention does not substantially damage the surrounding semiconductor material therefore it can be used with a wide variety of materials including porous, mechanically fragile, low dielectric constant materials and high conductive metals like Cu. Methods of fabricating such a semiconductor fuse structure are also provided herein.
Claims29
A method of forming a semiconductor fuse structure comprising the steps of:
- (a) providing a semiconductor structure, said structure comprising at least one wiring level formed on a semiconductor substrate;
- (b) forming a first dielectric layer having an upper surface on a surface of said semiconductor structure;
- (c) forming first and second conductive lines in said first dielectric layer, each conductive line having an end and a top surface that is coplanar with said upper surface of said first dielectric layer, said ends being in proximity to each other,
- (d) forming a second dielectric layer on said first dielectric layer covering said first and second conductive lines;
- (e) forming a hole in said second dielectric layer, said hole at least exposing a portion of said first and second conductive lines;
- and
- (f) filling said hole with a conductive fuse material to provide an electrical connection between said first and second conductive lines.
A method of forming a semiconductor fuse structure comprising the steps of:
- (a) providing a semiconductor structure, said structure comprising at least one wiring level formed on a semiconductor substrate;
- (b) forming a first dielectric layer having an upper surface on a surface of said semiconductor substrate;
- (c) forming at least one electrically connected conductive line having a top surface that is coplanar with said upper surface of said first dielectric layer in said first dielectric layer, said at least one electrically connected conductive line having no gaps;
- (d) forming a second dielectric layer on said first dielectric layer covering said at least one electrically connected conductive line;
- (f) forming a hole in said second dielectric layer, said hole bisecting said at least one electrically conned conductive line into a first non-electrically connected conductive line and a second non-electrically connected conductive line, each line having an end, wherein said ends are in proximity to each other;
- and
- (g) filling said hole with a conductive fuse material to provide an electrical connection between the first and second conductive lines.
Dependencies are inferred from the claim text.