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US 6,440,829 B1Granted
N-profile engineering at the poly/gate oxide and gate oxide/SI interfaces through NH3 annealing of a layered poly/amorphous-silicon structure
AssigneeAgere Systems Guardian Corp.
InventorsPradip K. Roy, Yi Ma, Michael A. Laughery
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Abstract
A method and structure providing N-profile engineering at the poly/gate oxide and gate oxide/Si interfaces of a layered polysilicon/amorphous silicon structure of a semiconductor device. NH3 annealing provides for the introduction of nitrogen to the interface, where the nitrogen suppresses Boron diffusion, improves gate oxide integrity, and reduces the sites available for trapping hot carriers which degrade device performance.
Claims24
A method for forming a semiconductor structure within a semiconductor device, comprising the steps of:
- a. providing a semiconductor substrate;
- b. forming a dielectric film on said substrate, said dielectric film having an upper surface;
- c. sequentially forming a plurality of semiconductor sublayers including a bottom semiconductor sublayers on said upper surface of said dielectric film, said plurality of semiconductor sublayers including a bottom semiconductor sublayer having a lower surface forming an interface region with said upper surface of said dielectric film and thereby forming a layered structure;
- and
- d. adding nitrogen to said interface region by annealing said layered structure in NH3 not prior to the completion of said step of sequentially forming said plurality of semiconductor sublayers.
2 more elements
Dependencies are inferred from the claim text.