Method of making semiconductor device having an insulating film positioned between two similarly shaped conductive films
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorMasahiro Ishida
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Abstract
A plurality of conductive films are formed on a semiconductor substrate with an insulating film sandwiched between the adjacent conductive films, and at least two of the plurality of conductive films are patterned simultaneously in the same shape. Selected ones of the plurality of conductive films are connected through viaholes formed in the insulating film to the semiconductor substrate. High-resistance elements, capacity elements or thin-film transistors are formed by using the selected ones of the plurality of conductive films. Thus, mask superposing allowances are made unnecessary in fabricating a semiconductor device, and the number of processes for fabricating the semiconductor device is reduced.
Claims3
A method of fabricating a semiconductor device, the semiconductor device having a static-type memory cell including a pair of driver transistors and a pair of load elements, the method comprising the steps of:
- forming a gate insulating film on a main surface of a semiconductor substrate;
- forming a first conductive film on said gate insulating film constituting a gate electrode of said driver transistors;
- forming a first insulating film on said first conductive film;
- forming an opening successively through said first insulating film, said first conductive film and said gate insulating film to expose said semiconductor substrate;
- forming a second conductive film on said first insulating film and in said opening constituting said load elements;
- and
- forming a same planar pattern that includes said opening in order of said second conductive film, said first insulating film and said first conductive film.
Dependencies are inferred from the claim text.