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US 6,440,638 B2Granted
Method and apparatus for resist planarization
AssigneeInternational Business Machines Corporation
InventorsJohn Golz, Chorng-Lii Hwang, John Zhu
Life of this patent
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Abstract
A method for planarizing a layer of photoresist on a substrate. The layer of photoresist is exposed to wavelengths of radiation that the photoresist is sensitive to. The radiation is directed at the layer of photoresist at an oblique angle with respect to a major dimension of the layer of photoresist. The photoresist is developed.
Claims13
A method for fabricating a photoresist plug having controlled vertical dimensions within a trench, said method comprising the steps of:
- providing a substrate having at least one trench formed therein;
- providing a layer of photoresist over said substrate, said photoresist filling said at least one trench;
- exposing said layer of photoresist to wavelengths of radiation to which said photoresist is sensitive, wherein said photoresist in said at least one trench is exposed to a controlled depth, wherein said radiation is directed at said layer of photoresist at an oblique angle of incidence with respect to a major dimension of said layer of photoresist, and wherein said depth is controlled by said angle of incidence;
- developing said exposed layer of photoresist;
- and
- stripping said exposed layer of photoresist.
3 more elements
A method for forming a semiconductor device, the method comprising the steps of
- forming at least one trench in a substrate;
- depositing a layer of a photoresist on the substrate and in the at least one trench, wherein said layer of photoresist deposited in the at least one trench results in formation of recesses in an upper surface of the layer of photoresist;
- exposing the layer of photoresist to wavelengths of radiation that the layer of photoresist is sensitive to, wherein the radiation is directed at the layer of photoresist at an oblique angle with respect to a major dimension of the layer of photoresist, and wherein the radiation is directed at the layer of photoresist from a plurality of angles around the substrate;
- developing the layer of photoresist, wherein said photoresist in said at least one trench is exposed to a controlled depth, wherein said radiation is directed at said layer of photoresist at an oblique angle of incidence with respect to a major dimension of said layer of photoresist, and wherein said depth is controlled by said angle of incidence;
- wherein after developing of the layer of photoresist the recesses are substantially eliminated;
- and
- subjecting the photoresist to further processing.
4 more elements
Dependencies are inferred from the claim text.