Method of repairing a mask with high electron scattering and low electron absorption properties
AssigneeNikon Corporation
InventorSumito Shimizu
Life of this patent
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Abstract
A method to repair a scattering stencil type mask having a high electron beam scattering property and low electron absorption. In order to correct a defect caused at the time of manufacturing of the mask, which is being used when a reduction projection image is transferred onto a substrate and has a pattern projection portion comprising an electron beam scattering material, a repair membrane is formed in the defective portion of the mask by irradiating a charged particle beam to said defect while a gas including substances having high scattering properties are supplied to the close vicinity of the defective portion.
Claims19
A method of repairing a defect of a mask used in a projection lithography system having a pattern with high electron scattering property and low electron absorption, comprising following steps:
- detecting a defect area in the pattern of manufactured mask;
- supplying a gas comprising at least one compound material including halogen for use as an etching agent for silicon, said supplied gas including one of the following:
- iodine, chlorine, xenon fluoride, carbon tetrachloride group, carbon trichloride group, carbon tetrafluoride group, or carbon trifluoride group;
- said supplied gas being first diluted by an inert gas and then supplied to the vicinity of the defect area with an adjusted flow rate;
- and
- irradiating a charged particle beam to said defect area.
A method of repairing a defect of a mask used in projection lithography system, having a pattern with high electron scattering property and low electron absorption, comprising following steps:
- detecting a defective portion in the pattern when transferred to a wafer;
- and
- forming a membrane in the defective portion, the membrane composed of a material, main element of which is silicon or carbon, and including substances comprising at least one atom of nonmetal Vb group atoms and semiconductor atoms except silicon, a nonmetal atom and a metal atom.
A method of repairing a defective portion of a mask used in projection lithography system, having a pattern with high electron scattering property and low electron absorption, by forming a membrane selectively in a defective portion, the method comprising following steps:
- detecting the defective portion;
- supplying a plurality of gasified substances comprising electron beam scattering substances mixed at a predetermined mixture ratio to the vicinity of the defective portion individually;
- and
- irradiating the charged particle beam to the defective portion.
A method of repairing a defective portion of a mask used in projection lithography system, having a pattern with high electron scattering property and low electron absorption, by forming a membrane selectively in a defective portion, the method comprising following steps:
- detecting the defective portion;
- forming in the defective portion a membrane composed of a substance, main element of which is carbon or silicon:
- and
- forming a repair reinforcement layer on the membrane.
A structure for repairing a defective portion of a mask used in projection lithography system, the mask having a pattern with high electron scattering property and low electron absorption, the structure comprising a membrane formed in the defective portion and composed of a material, a main element of which is silicon or carbon, comprising substances containing at least one atom of nonmetal Vb group atoms and semiconductor atoms except silicon, a nonmetal atom, and a metal atom in a defect portion.
A structure for repairing a defective portion of a mask used in projection lithography system, the mask having a pattern with high electron scattering property and low electron absorption, the structure comprising;
- a membrane formed in the defective portion and composed of a substance main element of which is carbon or silicon;
- and
- a repair reinforcement layer composed of substances containing semiconductor atoms except silicon, non-metal atoms, or metal atoms, and formed on the membrane.
Dependencies are inferred from the claim text.