In-situ source synthesis for metal CVD
AssigneeTokyo Electron Limited
InventorChantal Arena-Foster
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Abstract
An in-situ method for synthesis of a vapor type of copper or other metal precursor from a solid source of metal in an oxidation state of 1 or greater The solid source is localized above the wafer and its temperature is controlled independently from the wafer temperature. The solid source may be located, for example, in a showerhead. A metal precursor vapor is produced, and this vapor is drawn onto the wafer, allowing deposition to occur on the wafer and a solid thin metal film to form on the wafer. The invention overcomes the problem of low partial pressure of copper precursors in copper CVD.
Claims30
A method for depositing a metal film on a substrate, comprising the steps of:
- providing a solid source of a metal in an oxidation state of 1 or greater in a CVD chamber, the source being positioned above the substrate;
- injecting an organic gas into the chamber and heating the source to a temperature sufficient to react the gas with the solid metal source to form a vapor organometallic precursor;
- directing the vapor organometallic precursor toward the substrate;
- and
- heating the substrate to a temperature sufficient to decompose the precursor on a surface of the substrate to form a metal film.
A method for depositing a copper film on a substrate, comprising the steps of:
- providing a solid source of copper in an oxidation state of 1 or greater in a CVD chamber, the source being positioned above the substrate;
- injecting an organic gas into the chamber and heating the source to a temperature sufficient to react the organic gas with the copper to form a copper organovapor precursor, wherein the gas comprises a mixture of a first compound capable of generating a bidendate ligand and a second compound capable of generating a Lewis-based ligand;
- directing the copper organovapor precursor toward the substrate;
- and
- heating the substrate to a temperature sufficient to decompose the precursor on a surface of the substrate to form a copper film.
Dependencies are inferred from the claim text.