Diode-assisted gate turn-off thyristor
AssigneeVirginia Tech Intellectual Properties, Inc.
InventorsYuxin Li, Alex Q. Huang, Kevin Motto
Life of this patent
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Abstract
A gate-controlled switch includes a gate turn-off thyristor in series with a diode. By using the diode in series with the GTO, the switch significantly increases the turn-off voltage that can be used for the current commutation. The unity turn-off gain and the snubberless turn-off capability are demonstrated.
Claims16
A gate turn-off thyristor circuit having an anode and a cathode, comprising:
- a gate turnoff thyristor connected to said anode;
- a diode connected in series with said gate turn-off thyristor in a cathode current path and said cathode;
- a turn-off voltage source connected to said diode;
- and
- a gate loop stray inductance element connected between said turn-off voltage and said gate turn-off thyristor,
- wherein a turn-off current commutating rate of said gate turn-off thyristor is based on a breakdown voltage of said diode.
A gate turn-off thyristor circuit having an anode and a cathode comprising:
- a gate turn-off thyristor connected to said anode;
- a plurality of parallel-connected diodes between said gate turn-off thyristor in a cathode current path and said cathode;
- a turn-off voltage source connected to said plurality of diodes;
- and
- a gate loop stray inductance element connected between said turn-off voltage and said gate turn-off thyristor;
- wherein said plurality of diodes form a diode element having a breakdown voltage, and wherein a turn-off current commutating rate of said gate turn-off thyristor is based on the breakdown voltage of said diode element.
A method for performing snubberless switching of a gate turn-off thyristor circuit, said circuit including an anode and a cathode, comprising:
- connecting a gate turn-off thyristor to said anode;
- connecting a diode in series with said gate turn-off thyristor in a cathode current path and said cathode;
- connecting a turn-off voltage source to said diode;
- connecting a gate loop stray inductance element between said turn-off voltage and said gate turn-off thyristor;
- and
- increasing a turn-off current commutating rate of said gate turn-off thyristor by increasing a breakdown voltage of said diode.
Dependencies are inferred from the claim text.