Method for sample separation and lift-out with one cut
AssigneeOmniprobe, Inc.
InventorsThomas M. Moore, Rocky D. Kruger, Cheryl Hartfield
Life of this patent
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Abstract
When a desired portion is separated from an integrated circuit chip or a semiconductor wafer, the portion is separated so that the resulting sample can be moved to a location for examination by TEM, SEM or other means. A sample portion of the chip or wafer containing an area of interest is separated with a single cut by a focused ion-beam. Prior to separation, the sample is fixed to a micromanipulator probe. The sample is moved by the probe to the location for examination and fixed there. The probe is then detached from the sample by the focused ion-beam.
Claims16
A method for sample separation and lift-out comprising the steps of:
- a. positioning a wafer, the wafer having a target, inside a FIB instrument, for inspection of the target;
- b. fixing the tip of a probe to the wafer;
- c. Positioning an ion beam at an angle less than 90 degrees to the plane of the wafer;
- d. cutting from one direction with the ion beam a sample of the wafer enclosing the target and the fixed probe, so that the sample is completely released from the wafer;
- e. moving the probe with the sample fixed to it to a holder for inspection;
- f. fixing the sample to the holder;
- and,
- g. detaching the probe from the sample.
A method for sample separation and lift-out comprising the steps of:
- a. cleaving a wafer, the wafer having a target, so as to place the target near the edge of the cleaved wafer;
- b. fixing the tip of a probe to the wafer by ion-beam metal deposition;
- c. positioning an ion-beam at an angle of approximately 50 degrees to the plane of the wafer;
- d. cutting from one direction with the ion-beam a U-shaped path on the surface of the wafer, the path surrounding the target and the fixed probe, so that the sample is completely released from the wafer;
- e. lowering the wafer slightly;
- f. moving the probe with the sample fixed to it to a TEM grid;
- the TEM grid having a cut across it to provide a V-shape open above;
- g. fixing the sample to the TEM grid by ion-beam metal deposition;
- and,
- h. detaching the probe from the sample by cutting with the ion beam.
Dependencies are inferred from the claim text.