SOI wafer device and a method of fabricating the same

Abstract

The present invention discloses a SOI device capable of removing a floating body effect and improving a static electricity emission characteristic and a method of fabricating the same. The SOI device according to the present invention, comprising: a base substrate; a buried oxide layer formed to expose a predetermined region of the base substrate on the base substrate; a body contact layer formed to the same thickness as the buried oxide layer on the exposed base substrate region; a body layer of a transistor formed on the buried oxide layer and the body contact layer; a gate having a gate oxide layer formed on the body layer; and a drain region and a source region formed in a depth contacting with the buried oxide in the body layer region at both sides of the gate, the source being in contact with the body contact layer.

Dependencies are inferred from the claim text.