Crystalline gallium nitride and method for forming crystalline gallium nitride

A gallium nitride growth process for forming crystalline gallium nitride, the process comprising:

• providing a source gallium nitride, the source gallium nitride comprising gallium nitride;
• providing a mineralizer;
• providing a solvent;
• providing a capsule comprising a first end unit and a second end unit, said first end unit and said second end unit being opposed to each other;
• combining the source gallium nitride with at least one of a mineralizer and
• a solvent to form a mixture;
• compacting the mixture;
• disposing the mixture in said first unit of the capsule;
• disposing at least one of the mineralizer and the solvent to said first unit of the capsule so the mixture in the capsule comprises source gallium nitride, mineralizer, and solvent;
• sealing said first unit of the capsule to said second unit;
• disposing the capsule in a pressure cell;
• and
• subjecting the pressure cell to (HPHT) conditions, wherein said first end of the capsule is subjected to a pressure of greater than 5 kbar and a temperature of greater than 550° C., wherein a temperature differential between said first end and said second end of the capsule is established, and wherein the temperature differential between said first end and said second end is between about 5° C. and about 300° C., for a length of time sufficient to dissolve the source gallium nitride and precipitate the source gallium nitride into at least one gallium nitride crystal;
• cooling the high pressure and high temperature (HPHT) system;
• relieving the pressure in the high pressure and high temperature (HPHT);
• removing the gallium nitride crystals from the high pressure and high temperature (HPHT) system;
• and
• washing the gallium nitride crystals in at least one of water and mineral acids.

A gallium nitride growth process for forming crystalline gallium nitride, the process comprising:

• providing a capsule that comprises two opposed end units;
• disposing source gallium nitride crystal seed in one end unit of the capsule;
• disposing source gallium nitride with at least one of a mineralizer and a solvent in the other end unit of the capsule, the source gallium nitride comprising gallium nitride;
• disposing solvent in each of the capsule end units;
• subjecting the pressure cell to (HPHT) conditions, wherein said first end of the capsule is subjected to a pressure of greater than 5 kbar and a temperature of greater than 550° C., wherein a temperature differential between said first end and said second end of the capsule is established, and wherein the temperature differential between said first end and said second end is between about 5° C. and about 300° C., for a length of time sufficient to dissolve the source gallium nitride and precipitate the source gallium nitride onto at least one gallium nitride crystal.

A gallium nitride growth process for forming crystalline gallium nitride, the process comprising:

• providing source gallium, wherein the source gallium comprises at least one of liquid or solid gallium;
• providing a capsule that comprises first and second opposed end units;
• disposing the source gallium in said first unit of the capsule;
• disposing the source gallium with at least one of a mineralizer and a solvent to form a mixture, wherein the mineralizer and the solvent are disposed with the source gallium nitride by one of;
• disposing the mineralizer and solvent individually to the source gallium nitride;
• or
• disposing the solvent and mineralizer separately to the source gallium nitride;
• subjecting said first end of the capsule to a pressure of greater than 5 kbar and less than about 80 kbar and a temperature of greater than 550° C. and less than about 3000° C., the temperature differential between said first and second ends being from about 5° C. to about 300° C., for a length of time sufficient to react the liquefied gallium with the ammonia under the HPHT growth conditions to form gallium nitride;
• and
• subjecting the capsule to high pressure and high temperature (HPHT) conditions for a length of time sufficient to dissolve the formed gallium nitride and precipitate the source gallium nitride into at least one gallium nitride crystal.

A gallium nitride growth process for forming crystalline gallium nitride, the process comprising:

• providing a source gallium nitride, the source gallium nitride comprising gallium nitride;
• providing a mineralizer;
• providing a solvent;
• providing a capsule comprising a first end unit and a second end unit, said first end unit and said second end unit being opposed to each other;
• combining the source gallium nitride with at least one of a mineralizer and a solvent to form a mixture;
• disposing the mixture in said first unit of the capsule;
• disposing at least one of the mineralizer and the solvent in said first unit of the capsule so the mixture in the capsule comprises source gallium nitride, mineralizer, and solvent;
• sealing said first unit of the capsule to said second unit;
• disposing the capsule in a pressure cell;
• and
• subjecting the pressure cell to (HPHT) conditions, wherein said first end of the capsule is subjected to a pressure of greater than 5 kbar and a temperature of greater than 550° C., wherein a temperature differential between said first end and said second end of the capsule is established, and wherein the temperature differential between said first and second ends is between about 5° C. and about 300° C., for a length of time sufficient to dissolve the source gallium nitride and precipitate the source gallium nitride into at least one gallium nitride crystal;
• cooling the high pressure and high temperature (HPHT) system;
• relieving the pressure in the high pressure and high temperature (HPHT);
• removing the gallium nitride crystals from the high pressure and high temperature (HPHT) system;
• and
• washing the gallium nitride crystals in at least one of water and mineral acids.