Probe with optical waveguide and method of producing the same
AssigneeJapan Science and Technology Corporation
InventorsKoichi Mukasa, Kazuhisa Sueoka
Life of this patent
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Abstract
To provide a probe having an optical waveguide which is robust and highly reliable, and a method of manufacturing the same. A probe having an optical waveguide includes an optical waveguide portion having a double hetero structure and comprising an In1−x′−y′Gax′Aly′N layer (5), an In1−x−yGaxAlyN layer (4), and an In1−x″−y″Gax″Aly″N layer (3); and an AlxGa1−xN probe portion (8) grown in a conical shape on the In1−x−yGaxAlyN layer (4) of the optical waveguide portion.
Claims6
A probe having an optical waveguide, characterized by comprising:
- (a) an optical waveguide portion having a double hetero structure and comprising an In1−x′−y′Gax′Aly′N layer, an In1−x−yGaxAlyN layer, and an In1−x″−y″Gax″Aly″N layer;
- and
- (b) an AlxGa1−xN probe portion grown in a conical shape on the In1−x−yGaxAlyN layer of the optical waveguide portion.
A probe having an optical waveguide, characterized by comprising:
- (a) an optical waveguide portion having a double hetero structure and comprising an In1−x′−y′Gax′Aly′N layer, an In1−x−yGaxAlyN layer, and an In1−x″−y″Gax″Aly″N layer, where 0≦x, y, x′, y′, x″, y″, x+y, x′+y′, x″+y″≦1, and the In1−x−yGaxAlyN layer has a minimum band gap energy;
- and
- (b) an AlxGa1−xN probe portion grown in a conical shape such that the probe portion is connected to a portion of the In1−x−yGaxAlyN layer, wherein
- (c) light propagating through an optical waveguide layer constituted by the In1−x−yGaxAlyN layer is led to the probe portion in order to excite electrons at the tip end of the probe portion.
A method of manufacturing a probe having an optical waveguide, characterized by comprising:
- (a) growing on a (0001) face of a sapphire substrate a double hetero structure comprising an In1−x′−y′Gax′Aly′N layer, an In1−x−yGaxAlyN layer, and an In1−x″−y″Gax″Aly″N layer by use of organometallic vapor phase epitaxy to thereby form an optical waveguide portion;
- and
- (b) growing an AlxGa1−xN probe portion in a conical shape on the In1−x−yGaxAlyN layer of the optical waveguide portion such that the AlxGa1−xN prove portion is connected to the In1−x−yGaxAlyN layer of the optical waveguide portion.
A method of manufacturing a probe having an optical waveguide, characterized by comprising:
- (a) growing on a (0001) face of a sapphire substrate a double hetero structure comprising an In1−x′−y′Gax′Aly′N layer, an In1−x−yGaxAlyN layer, and an In1−x″−y″Gax″Aly″N layer to thereby form an optical waveguide, where 0≦x, y, x′, y′, x″, y″, x+y, x′+y′, x″+y″≦1, and the In1−x−yGaxAlyN layer has a minimum band gap energy;
- and
- (b) exposing a portion of the In1−x−yGaxAlyN layer, and growing an AlxGa1−xN probe portion in a conical shape on the exposed portion of the In1−x−yGaxAlyN layer.
Dependencies are inferred from the claim text.