Semiconductor device

A semiconductor device comprising:

• first patterns for alignment which are arranged in a first region on the surface of a semiconductor substrate, said first patterns including (n+1) first patterns (n is a natural number) in at least a first direction;
• and
• second patterns which are formed in a second region on the surface of the semiconductor substrate, said second region extending outwardly from said first region in said first direction, said second patterns including m second patterns (m is a natural number) which are non-periodically arranged in at least said first direction,
• wherein defining a size of a first pitch between adjacent two of said first patterns in said first direction as dk (1≦k≦n),
• defining a second pitch between one of said first patterns and one of said second patterns, which are closest to each other between said first region and said second region, in said first direction as dm,
• defining a size of a third pitch between adjacent two of said second patterns in said first direction as d(m−1) when m≧2,
• defining a coefficient depending on a precision in pattern recognition as α (1>α>0), and
• defining a distance between one of said first pattern, which is closest to said second region in said first direction, and the outside edge of said second region as D,
• said second region is set so as to satisfy the following relational expression, D ≦ ∑ k = 1 n ⁢ dk
• and said dm is set so as to satisfy the following relational expression with respect to a combination of said dm with optional dk
• |(dm−dk)/dk|≧α.

A semiconductor device comprising:

• first patterns for alignment which are arranged in a first region on the surface of a semiconductor substrate, said first patterns including (n+1) first patterns (n is a natural number) in at least a first direction;
• and
• second patterns which are formed in a second region on the surface of the semiconductor substrate and which are linear patterns arranged continuously in said first direction, said second region extending outwardly from said first region in said first direction,
• wherein defining a size of a pitch between adjacent two of said first patterns in said first direction as dk (1≦k≦n), and
• defining the size of said second pattern in said first direction as S,
• said second region is set so as to satisfy the following relational expression S ≧ ∑ k = 1 n ⁢ dk .

A semiconductor device comprising:

• first patterns for alignment which are arranged in a first region on the surface of a semiconductor substrate, said first patterns including (n+1) first patterns (n is a natural number) in at least a first direction;
• and
• second patterns which are arranged in a second region on the surface of the semiconductor substrate, said second region extending outwardly from said first region in said first direction, said second patterns including at least m pattern groups (m is a natural number) arranged repeatedly in at least said first direction, each of said pattern group being constituted with a unit of a combination of third patterns formed in a third region, said third region being included in said second region;
• wherein defining a pitch between adjacent two of said first patterns in said first direction as dk (1≦k≦n),
• defining the size of said third region in said first direction as dD,
• defining a distance between one of said first patterns, which is closest to said second region in said first direction, and the outside edge of said second region as D, and
• defining a coefficient depending on a precision in pattern recognition in said first direction as α (1>α>0),
• said second region is set so as to satisfy the following relational expression, D ≦ ∑ k = 1 n ⁢ dk
• and said dD is set so as to satisfy the following relational expression with respect to optional dk
• |(dD−dk)/dk|≦α.